ISZ230N10NM6ATMA1 vs IPTC017N12NM6ATMA1 比較
詳細並排比較 ISZ230N10NM6ATMA1 由 Infineon 與 IPTC017N12NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ230N10NM6ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | 3.8 W |
| Power Dissipation (Tc) | 48 W | 395 W |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6, N-channel trench MOSFET |
| 封裝 | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-HDSOP-16 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V | 10 V |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| 工作溫度 | — | -55 °C to +175 °C (TJ max) |