K4A8G045WB-BCRC vs K4A8G045WB 比較
詳細並排比較 K4A8G045WB-BCRC 由 Samsung Electronics 與 K4A8G045WB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G045WB-BCRC | K4A8G045WB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gb |
| 組織 | 2G x 4 | 2G x 4 |
| Speed | 2400 Mbps | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V | — |
| Process Technology | Samsung B-die | — |
| 介面 | CMOS, differential clock (CK/CK#) | — |
| Refresh Cycles | 8192 | 8192 |
| Maximum Supply Current | 211.7 mA | — |
| 工作溫度 | 0 C to 85 C | 0 C to +85 C |
| 封裝 | 78-ball FBGA (PBGA78) | 78-ball FBGA |
| Terminals | 78 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset | — |
| DLL Mode | Timing specified for DLL-enabled operation | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| 資料速率 | — | 2133 Mbps |
| 供應電壓 | — | 1.2 V |
| Max Supply Current | — | 211.7 mA |
| Number of Terminals | — | 78 |
| Clocking | — | Differential clock (CK / CK#) |
| On-Die Termination | — | Yes (ODT pin) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Programmable CWL | — | Yes |
| Internal (Self) Calibration | — | Yes |