K4B4G1646D-BYH90 vs K4B4G1646E-BYK000 比較
詳細並排比較 K4B4G1646D-BYH90 由 Samsung Electronics 與 K4B4G1646E-BYK000 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646D-BYH90 | K4B4G1646E-BYK000 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| 組織 | 512M x 16 | 256M x 16 |
| 資料速率 | 2133 Mbps/pin | — |
| 供應電壓 | 1.35V (1.283V to 1.45V) | — |
| I/O Interface | x16 | — |
| Number of Banks | 8 | [DATA_NEEDED: bank count] |
| 封裝 | 96-ball FBGA (TFBGA) | 96-FBGA (BYK) |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | 0°C to +85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | Programmable (e.g., 11, 12, 13) | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| On-Die Termination | Yes (ODT pin) | — |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| 記憶體容量 | — | 4 Gbit |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | — | 800 MHz |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Die Process | — | Samsung E-die |
| 安裝類型 | — | Surface Mount |
| 介面 | — | Parallel |
| 功能特色 | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |
| Access Time | — | 1.25 ns |