K4RCH046VM-2CCM vs K4RHE086VB-BCWM 比較

詳細並排比較 K4RCH046VM-2CCM 由 Samsung Electronics 與 K4RHE086VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RCH046VM-2CCM K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM Nrnd
Samsung Electronics
K4RHE086VB-BCWM K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE086VB-BCWM ✓ 啟用中

規格比較

參數 K4RCH046VM-2CCM K4RHE086VB-BCWM
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 NRND 啟用中
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 32 Gb 24 Gb
組織 4G x 4 2G x 8
資料速率 5600 Mbps 5600 Mbps
供應電壓 1.1 V 1.1 V
工作溫度 0 to 85 C [DATA_NEEDED: operating temperature range]
封裝 78-ball FBGA 82 FBGA
安裝類型 Surface Mount Surface Mount
Product Status Sample —
Access Latency (CL) [DATA_NEEDED: CAS latency] —
Refresh Rate [DATA_NEEDED: refresh rate] —
介面類型 [DATA_NEEDED: interface type] —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
RoHS 狀態 [DATA_NEEDED: RoHS status] unknown
On-Die ECC [DATA_NEEDED: on-die ECC support] [DATA_NEEDED: on-die ECC support]
介面 — DDR5 (JEDEC)
Configuration — x8
Application Segment — Server / Data Center / Premium PC
Manufacturer — Samsung Semiconductor
Access Time / CAS Latency — [DATA_NEEDED: CAS latency]
Package Height — [DATA_NEEDED: package height]

資料表與資源

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