K6X0808C1D-BF55 vs K6X0808C1D-GF55T 比較
詳細並排比較 K6X0808C1D-BF55 由 Samsung Electronics 與 K6X0808C1D-GF55T 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ 啟用中Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ 啟用中規格比較
| 參數 | K6X0808C1D-BF55 | K6X0808C1D-GF55T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Asynchronous SRAM | SRAM - Asynchronous |
| 記憶體容量 | 256 Kbit | 256 Kbit |
| 組織 | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| 介面 | Parallel | Parallel |
| 供應電壓 | 5 V | 5.0 V |
| Technology | CMOS | — |
| 封裝 | 28-SOP | 28-SOP (450 mil) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Process Technology | — | Full CMOS |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Address Bus Width | — | 15 bit |
| 資料匯流排寬度 | — | 8 bit |
| Packaging | — | Tape & Reel (T suffix) |