K9F6408Q0C vs K9F6408U0B 比較
詳細並排比較 K9F6408Q0C 由 Samsung Electronics 與 K9F6408U0B 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics
K9F6408Q0C Obsolete
規格比較
| 參數 | K9F6408Q0C | K9F6408U0B |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | Obsolete |
| 記憶體類型 | NAND Flash (SLC) | NAND Flash |
| Memory Capacity | 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) | — |
| 組織 | 8M x 8 | — |
| 介面 | Parallel, 8-bit multiplexed I/O | 8-bit multiplexed command/address/data I/O |
| Operating Voltage (VCC) | 1.65 V to 1.95 V | 2.7 V to 3.6 V |
| Access Time | 10 us (read cycle, family listing) | — |
| Page Size | 528 bytes (512 data + 16 spare) | 528 bytes (512 data + 16 spare) |
| Temperature Grade | C (commercial), i (industrial) | — |
| Package (HIB0 variant) | 48-ball TBGA | — |
| Package (family TBGA note) | 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Spare Area | 256K x 8 bit | — |
| Control Signals | CLE, ALE, CE, WE, RE, WP, R/B | — |
| Bad Block Management | Host-managed (marking in spare area) | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Access Time / Cycle Time | — | 50 ns |
| 封裝 | — | 44-TSOP2 |
| Block Size | — | [DATA_NEEDED: block organization from datasheet] |
| Program/Erase Endurance | — | 100K program/erase cycles |
| Write Protect | — | Yes (WP pin) |
| Ready/Busy Output | — | Yes (R/B open-drain) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |