K9LCG08U1M vs K9HQGY8S5M 比較
詳細並排比較 K9LCG08U1M 由 Samsung Electronics 與 K9HQGY8S5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9LCG08U1M | K9HQGY8S5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Flash | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NAND Flash, MLC | — |
| Density | 64 Gbit (8 GB) | [DATA_NEEDED: total bit density] |
| 組織 | x8 I/O | — |
| 介面 | Asynchronous multiplexed NAND I/O | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Cell Type | MLC (2 bits per cell) | — |
| 封裝 | BGA | — |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 供應電壓 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: VCC range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Manufacturer | — | Samsung Electronics |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |