L9779WDM-TR vs L9779WD-TR 比較

詳細並排比較 L9779WDM-TR 由 STMicroelectronics 與 L9779WD-TR 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

STMicroelectronics
L9779WDM-TR L9779WDM-TR - Automotive Quad Low-Side Driver | STMicroelectronics

L9779WDM-TR - Automotive Quad Low-Side Driver | STMicroelectronics

L9779WDM-TR ✓ 啟用中

規格比較

參數 L9779WDM-TR L9779WD-TR
品牌 STMicroelectronics STMicroelectronics
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Number of Channels 4 —
輸出類型 Low-Side Open-Drain —
Supply Voltage Range 4.5 V to 40 V —
Maximum Output Current per Channel 1 A —
On-Resistance (Typical) 0.5 ohm —
靜態電流 10 uA (standby) —
PWM Frequency Up to 20 kHz —
介面 SPI —
Protection Features Overcurrent, Overtemperature, Short-Circuit —
工作溫度範圍 -40C to +150C —
封裝 SOIC-20 (SO-20) HiQUAD-64 (power package, exposed pad)
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 hours) —
RoHS 狀態 Compliant Compliant
AEC-Q100 Qualified —
功能 — Multifunction IC for engine management
拓撲 — Engine Management PMIC with MSC interface
Process Technology — BCD6S
Supply Voltage (VBAT) — Up to 18 V typ., load-dump tolerant
Number of 5 V Sensor Supplies — 5 (current-limited)
Injector Low-Side Drivers — 4 x low-side drivers
Lamp/Relay Pre-Drivers — 4 x low-side pre-drivers
Communication Interface — MSC (L9779WD/-TR); SPI (L9779WD-SPI/-SPI-TR)
Watchdog — Yes (integrated)
KEY_ON Input — Yes (internal pull-down, external reverse-battery diode)
Charge Pump — Yes (internal, for N-channel FET drive)
過熱關機 — Yes
工作溫度 — -40C to +125C (automotive AEC-Q100 grade)
Packaging — Tape & Reel (TR suffix)

資料表與資源

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