MPX5010DP vs MPXV12GW6U 比較
詳細並排比較 MPX5010DP 由 NXP Semiconductors 與 MPXV12GW6U 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MPX5010DP | MPXV12GW6U |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | Pressure Sensors | Pressure Sensors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Pressure Type | Differential | — |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | — |
| Sensitivity | 450 mV/kPa (typical) | — |
| 輸出電壓範圍 | 0.2 V to 4.7 V | — |
| 供應電壓 | 4.75 V to 5.25 V (5 V typical) | — |
| 供應電流 | [DATA_NEEDED: supply current mA] | — |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| 工作溫度 | 0 C to +85 C (compensated) | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| 封裝 | 6-SIP Module | — |
| 輸出類型 | Analog, ratiometric | Analog Millivolt (Wheatstone bridge) |
| 安裝類型 | Through-hole (SIP) | Surface Mount |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | — |
| RoHS 狀態 | Compliant | Compliant |
| Output Span | — | 0 mV to 55 mV at 3 V excitation |
| Excitation Voltage | — | 3 V typical |
| Pressure Port Type | — | Top port, 0.22" (5.59 mm) tube |
| 封裝 / 外殼 | — | 8-SMD, Gull Wing, Top Port |
| Accuracy | — | [DATA_NEEDED: linearity + temperature coefficient] |
| Configuration | — | Vented Gauge (reference to atmosphere) |
| Sensor Technology | — | Silicon piezoresistive (MEMS strain gauge) |
| Off-Pressure Offset | — | 0 mV minimum (no offset specified) |
| Compensation | — | Uncompensated (external calibration required) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Bridge Resistance | — | [DATA_NEEDED: input / output bridge impedance] |
| Typical Sensitivity | — | [DATA_NEEDED: mV/kPa at 3 V] |