MRF7S18170HR3 vs MRF7S19080HR3 比較

詳細並排比較 MRF7S18170HR3 由 NXP Semiconductors 與 MRF7S19080HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF7S18170HR3 MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors

MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors

MRF7S18170HR3 ✓ 啟用中
NXP Semiconductors
MRF7S19080HR3 MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station

MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station

MRF7S19080HR3 ✓ 啟用中

規格比較

參數 MRF7S18170HR3 MRF7S19080HR3
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology RF Power Field Effect Transistor HV7 RF Power LDMOS
Configuration Single, Common Source Single, Push-Pull
Drain-Source Voltage (Vds) Rated 65 V —
Test Drain Voltage (Vdd) 28 V —
Test Drain Current (Idq) 1.4 A —
Output Power (Pout) 50 W —
Power Gain 17.5 dB at 1.81 GHz —
Operating Frequency 1.805 GHz to 1.88 GHz —
封裝 NI-880H-2L (ceramic, metal-sealed cofired, flange mount) NI-780H-2L (ceramic, flanged)
安裝類型 Surface Mount / Flange Mount Surface Mount / Screw Mount
Application Class Class AB, Class C amplifier —
Target Application CDMA and multicarrier base station amplifiers —
Lead Free Status Yes (per datasheet) Lead Free
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] Compliant
Frequency Range — 1930 MHz to 1990 MHz
Test Frequency — 1.99 GHz (1987.5 MHz)
Drain-Source Voltage (Vdss) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V
Quiescent Current (IDQ) — 750 mA
Output Power (Pout, Avg.) — 24 W (W-CDMA)
Power Gain (Gp) — 18 dB
Drain Efficiency — 32 % at 24 W Avg.
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz channel
Device Output Signal PAR — 6.2 dB @ 0.01 % CCDF

資料表與資源

瀏覽所有產品 建立 BOM 索取報價