MT40A512M16LY-075:E vs MT40A512M16LY-062E 比較
詳細並排比較 MT40A512M16LY-075:E 由 Micron Technology 與 MT40A512M16LY-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M16LY-075:E | MT40A512M16LY-062E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.65 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) | 8 Gbit |
| 資料速率 | 2666 MT/s | 3200 MT/s |
| Clock Frequency | 1.33 GHz | 1.6 GHz |
| CAS 延遲 | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| 介面 | Parallel | — |
| 封裝 | 96-FBGA (7.5x13.5mm) | 96-ball FBGA (7.5 x 13.5 mm) |
| 工作溫度範圍 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 組織 | — | 512M x 16 |
| Access Time | — | 19 ns |
| Supply Voltage VDD/VDDQ | — | 1.2 V +/- 60 mV |
| Supply Voltage VPP | — | 2.5 V (-125 mV, +250 mV) |
| Bank Architecture | — | 16 banks in 2 groups of 4 (x16) |
| Refresh | — | 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C |
| I/O Interface | — | 1.2 V pseudo open-drain |
| 功能特色 | — | Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ |
| 工作溫度 | — | -40C to +95C (IT grade) |
| RoHS 狀態 | — | Compliant |