MT40A512M8SA-062E vs NT5AD512M16C4-JRU 比較
詳細並排比較 MT40A512M8SA-062E 由 Micron Technology 與 NT5AD512M16C4-JRU 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 啟用中規格比較
| 參數 | MT40A512M8SA-062E | NT5AD512M16C4-JRU |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $83.00 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 512M x 8 | 512M x 16 |
| Clock Frequency | 1.6 GHz | 1600 MHz (3200 Mbps data rate) |
| 資料速率 | 3200 MT/s (DDR4-3200 class) | — |
| Access Time | 13.75 ns | — |
| Write Cycle Time | 15 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP Supply | 2.5 V (-125 mV / +250 mV) | — |
| 介面 | Parallel, 1.2 V pseudo open-drain I/O | CMOS, DDR4 |
| VREFDQ | On-die internal adjustable generation | — |
| 封裝 | 78-FBGA (7.5 x 11 mm), Z10B | 96-ball FBGA (PBGA96) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C | — |
| Package Flow | :F (lead-free / RoHS) | — |
| 安裝方式 | SMD/SMT | — |
| Density | — | 8 Gbit |
| CAS Latency (CL) | — | 22 at 1600 MHz |
| Supply Voltage (VDD) | — | 1.2 V |
| 工作溫度 | — | -40 C to +95 C (industrial grade) |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS 狀態 | — | Green Product (per Nanya product page) |