ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
MPN： ISC040N10NM7ATMA1 ✓ 啟用中ISC040N10NM7ATMA1 概覽
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or modulate current in power-conversion circuits. N-channel enhancement-mode MOSFETs are the dominant building block of synchronous buck/boost converters, half-bridges, and full-bridges, sitting hierarchically under discrete semiconductors → transistors → MOSFETs → power MOSFETs. The OptiMOS 7 family represents Infineon's 100 V generation, with reduced figure-of-merit (RDS(on) × Qg) to push switching frequencies higher while keeping total losses lower than prior generations.
Key features include low RDS(on) per area for reduced conduction loss, an integrated Schottky-like body diode for reduced reverse-recovery (Qrr), and a low gate charge (Qg) for fast switching. The PG-TDSON-8-34 (SSO8) package offers a low thermal resistance path through the exposed pad, enabling sustained high-current operation with proper PCB copper thermal management.
Typical applications include 48 V telecom and industrial bus converters, high-current synchronous rectification in SMPS, hot-swap and e-fuse circuits, motor control half-bridges, and battery management system (BMS) protection MOSFETs. The wide safe operating area also suits automotive ECU power trains and solar MPPT stages when appropriately derated.
When designing with this part, ensure the gate-drive voltage reaches at least 10 V for full RDS(on) rating and that the PCB thermal copper area under the exposed pad meets the datasheet's 6 cm² reference footprint for published SOA and RthJC values. Use a gate resistor (typ. 10 Ω) to dampen parasitic ringing.
直接替換替代品，適用於 ISC040N10NM7ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： ISC040N10NM7ATMA1 （相同外形與佔位） — 差異在於 Package, Operating Temperature Range, Product Family, Technology, MSL Level.
ISC040N10NM7
✅ 直接替換📋 參考替代品（不在目錄中）
ISC011N04NM7VATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC015N06NM5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC028N03LF2SATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC037N12NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC151N08NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC040N10NM7ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta=25°C | 18 A |
| Continuous Drain Current (ID) at Tc=25°C | 130 A |
| Power Dissipation (PD) at Ta=25°C | 3 W |
| Power Dissipation (PD) at Tc=25°C | 150 W |
| 封裝 | PG-TDSON-8-34 (SSO8) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55°C to +175°C (TJ max) |
| RoHS 狀態 | Compliant |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) |
ISC040N10NM7ATMA1 腳位配置
| 腳位 1 | S — Source |
| 腳位 2 | S — Source |
| 腳位 3 | S — Source |
| 腳位 4 | G — Gate |
| 腳位 5 | D — Drain |
| 腳位 6 | D — Drain |
| 腳位 7 | D — Drain |
| 腳位 8 | D — Drain |
安全工作區 (DC) - PG-TDSON-8-34 on 6 cm² Cu, 40x40x1.5 mm FR4
典型應用
ISC040N10NM7ATMA1 適用於 6 應用s: 48V Telecom and Industrial DC-DC Conversion, Synchronous Rectification in SMPS, Hot-Swap and E-Fuse Protection, Motor Drive Half-Bridge (48V BLDC), Battery Management System (BMS) Protection, Solar MPPT and Photovoltaic Converters.
48V Telecom and Industrial DC-DC Conversion
The ISC040N10NM7ATMA1's 100V VDS rating provides 50% voltage headroom over a nominal 48V telecom bus (with 60V transient tolerance), while its 130A Tc current and 150W power dissipation make it ideal for high-density isolated and non-isolated 48V-to-12V/5V buck and forward converters in telecom rectifiers and industrial DIN-rail power supplies. The OptiMOS 7 generation cuts switching losses by 30-40% versus OptiMOS 5, enabling 200kHz+ switching and smaller magnetics. The PG-TDSON-8-34 (SSO8) exposed pad dissipates heat directly into top-side or bottom-side copper, sustaining 130A case-limited operation with a 6 cm² thermal pad.
推薦
Synchronous Rectification in SMPS
As a low-side synchronous rectifier in 24V-48V SMPS, the ISC040N10NM7ATMA1's optimized body diode (low Qrr) and low RDS(on) minimize conduction and reverse-recovery losses at high switching frequency. Designers typically pair it with a dedicated gate driver (e.g., 2ED21064S06JXUMA1) and a digital PWM controller (e.g., XDPP1140100BXUMA1) to build a 1-3kW PSU. The 100V VDS comfortably absorbs the voltage spike across the secondary-side rectifier in LLC and forward converters, simplifying snubber design. OptiMOS 7's 30% lower Qg vs Gen-6 reduces driver loss proportionally to switching frequency.
推薦
Hot-Swap and E-Fuse Protection
Hot-swap controllers in 48V server backplanes and e-fuse circuits need a MOSFET that can sustain inrush surge currents while dissipating transient power during load steps. The ISC040N10NM7ATMA1's 130A Tc continuous rating and 150W power dissipation allow sustained inrush limiting, while the 100V VDS handles 48V nominal with full transient margin per Telcordia GR-1089. The PG-TDSON-8-34 (SSO8) footprint permits dense multi-MOSFET paralleling for higher-current rails. Pair with ISZ230N10NM6ATMA1 (similar 100V class) for the OR-ing function and BTS51202EKAXUMA1 for the high-side smart-switch path.
推薦
Motor Drive Half-Bridge (48V BLDC)
In 48V BLDC motor drives for e-mobility (e-bikes, light EVs, robotics), the ISC040N10NM7ATMA1 serves as the half-bridge switch for ≤60V DC bus systems. The 18A Ta / 130A Tc current supports motors up to ~2kW continuous without paralleling. OptiMOS 7's fast body-diode recovery supports PWM frequencies of 50-100kHz common in FOC algorithms. The PG-TDSON-8-34 package's small footprint allows three-phase bridges in compact form factors, and the 6 cm² copper thermal pad sustains RMS switching currents during high-torque transients.
推薦
Battery Management System (BMS) Protection
In lithium-ion battery packs for 48V e-mobility and stationary storage, the ISC040N10NM7ATMA1 acts as the high-current charge/discharge disconnect switch. Its 130A Tc rating handles peak discharge currents of multi-kWh packs, and the 100V VDS covers up to 20s Li-ion stacks (84V nominal) with safety margin. The low RDS(on) minimizes voltage drop across the protection path, preserving usable battery capacity. OptiMOS 7's avalanche-rated body diode absorbs the inductive kick during disconnect, eliminating the need for an external TVS clamp on the battery rail.
推薦
Solar MPPT and Photovoltaic Converters
For photovoltaic micro-inverters and DC-optimizers operating from 60-cell panels (Voc up to 50V) and 72-cell panels (Voc up to 60V), the ISC040N10NM7ATMA1's 100V VDS provides ample margin for transient spikes from grid events and partial-shading reconfiguration. The 130A current and 150W dissipation enable single-MPPT-channel designs up to 3kW. The OptiMOS 7 family reduces switching loss enough to permit >100kHz operation, shrinking the boost inductor and improving MPPT tracking bandwidth for fast-changing irradiance. Pair with IR2104SPBF for the gate drive and a string-monitoring MCU for fault detection.
推薦
推薦產品摘要
工程參考資料，適用於 ISC040N10NM7ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | ISC040N10NM7 | ISC011N04NM7VATMA1 | ISC015N06NM5ATMA1 | ISC028N03LF2SATMA1 | ISC037N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) | PG-TDSON-8-34 (SSO8) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 40 V | 60 V | 30 V | 120 V | 80 V |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS LF2 | OptiMOS 6 | OptiMOS 6 |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
主要差異化特點
- OptiMOS 7 generation gives the lowest RDS(on)×Qg figure-of-merit in the 100V SSO8 class (對比ISC015N06NM5ATMA1)
- Higher voltage headroom than 60V/80V class parts, enabling safe operation on 48V telecom rails (對比ISC151N08NM6ATMA1)
- Same SSO8 footprint enables drop-in upgrade from 40V-80V SSO8 MOSFETs without PCB rework (對比ISC011N04NM7VATMA1)
設計說明
Estimated: at continuous Tc = 130 A and RDS(on) ≈ 4 mΩ, conduction loss = I²R ≈ 67 W. On the datasheet's reference PCB (40×40×1.5 mm FR4 with 6 cm² drain copper) the thermal resistance to ambient is approximately 50 °C/W, producing a 80 °C rise above ambient. For designs exceeding 30 W dissipation, attach the exposed pad to a top-side or bottom-side copper pour of at least 6 cm² and consider a thermal via array under the pad. Forced-air cooling is recommended when ambient exceeds 50 °C.
Minimize the high-current loop area by placing the MOSFET, gate driver, and decoupling capacitor within a 10 mm × 10 mm region. Use a Kelvin-source connection (separate source-sense trace back to the driver's GND) when available on the layout to avoid gate-ringing caused by source inductance. Add a 10 Ω gate resistor to dampen the LC resonance between gate-driver output inductance and the MOSFET's Ciss.
Do not exceed VGS = ±20 V (gate absolute max). Use a gate-drive voltage of 10-12 V for full RDS(on) rating - lower voltages produce partially-enhanced channel and dramatically higher losses. The body diode is avalanche-rated but repetitive avalanche operation reduces lifetime; add a freewheeling Schottky diode across the MOSFET when operating at high di/dt in bridge configurations to redirect the reverse-recovery energy.
At switching frequencies above 100 kHz, the gate-drain charge (Qgd) and output capacitance (Coss) dominate switching loss. Estimated: for Qgd ≈ 8 nC and Vdrive = 10 V, the gate-driver loss = Qgd × Vdrive × fsw ≈ 8 mW per kHz of switching frequency. For a 200 kHz design this is 1.6 W, which must be supplied by the gate driver - select a driver with at least 2 A peak source/sink capability.
合規資訊
RoHS and REACH compliant per Infineon product page. Standard ISC040N10NM7ATMA1 is not AEC-Q100 qualified - choose AEC-qualified OptiMOS 7 variants for automotive. Halogen-free and lead-free per JEDEC J-STD-709.
