K4A4G165WF-BCWE - 4Gb DDR4 SDRAM 3200Mbps | Samsung
MPN： K4A4G165WF-BCWE ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $13.1 | $13.10 |
| 10 | $12.45 | $124.50 |
| 100 | $11.8 | $1,180.00 |
| 500 | $11.2 | $5,600.00 |
| 1,000 | $10.65 | $10,650.00 |
K4A4G165WF-BCWE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy of volatile semiconductor memory: SDRAM -> DDR SDRAM -> DDR4 SDRAM. Compared to DDR3, DDR4 achieves higher speeds, lower operating voltage (1.2V versus 1.5V, roughly 25% lower power per Samsung), bank groups, and internal self-refresh enhancements, making it the dominant DRAM standard for embedded processors, industrial controllers, and networking equipment.
Key features of the K4A4G165WF-BCWE include a 4Gbit density in a x16 organization, DDR4-3200 speed grade (BCWE), a wide operating temperature range of 0C to +85C, and functions such as auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-chip termination (ODT), and data mask (DM) support. These features simplify controller interfacing and signal integrity management on high-speed PCB designs.
Technically, the device uses Samsung's F-die process on a 96-ball fine-pitch BGA substrate. The x16 organization provides a 16-bit data interface, reducing component count versus x8 designs at equal density. DDR4 bank-group architecture allows faster sequential access, while the 1.2V core and I/O rails reduce power consumption relative to DDR3L solutions. Address/command and data strobe termination are handled on-die, easing fly-by topology routing on multi-DRAM boards.
Typical applications include industrial HMI and edge-computing boards based on ARM or x86 embedded processors, networking equipment line cards, test and measurement instrumentation, and human-machine interface or display systems requiring 4GB-class DRAM buffers. The commercial 0C to +85C range fits factory and indoor equipment.
When designing with this component, follow Samsung's DDR4 routing guidelines: length-match data groups within tight skew budgets, fly-by route address/command, and verify ZQ calibration resistor placement. Confirm controller memory-compatibility lists (QVL) support DDR4-3200 x16 components before layout release.
This page synthesizes verified distributor pricing, drop-in Samsung-family alternatives, pin-package information, and practical design notes not found in a single manufacturer datasheet, giving engineers a single citation-ready resource.
直接替換替代品，適用於 K4A4G165WF-BCWE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4A4G165WF-BCWE （相同外形與佔位） — 差異在於 RoHS Status, Die Generation, Interface, Memory Type, Package.
快速比較工具 — 選擇替代零件進行並排比較：
K4A4G165WF-BCTD
✓ 有庫存
$8.2031 / 單位
查看資料表 →K4A4G165WE-BCTD
聯絡詢價
查看資料表 →K4A4G165WE-BCWE
📋 參考替代品（不在目錄中）
K4A4G165WE-BIRC0CV
📋 參考替代品（不在目錄中）
K4A4G165WF-BCWE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Memory Density | 4 Gbit |
| 組織 | 256M x 16 |
| 資料速率 | 3200 Mbps |
| Clock Frequency | 1.6 GHz |
| 供應電壓 | 1.2 V (1.14 V to 1.26 V) |
| Access Time | 19 ns |
| 工作溫度 | 0C to +85C |
| 封裝 | FBGA-96 (TFBGA) |
| 安裝類型 | Surface Mount |
| 介面 | Parallel |
| Die Generation | Samsung F-die |
| Data Mask | Supported (DM) |
| ZQ Calibration | Supported |
| On-Die Termination | Dynamic ODT supported |
| CRC | Supported |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| RoHS 狀態 | Compliant (per JLCPCB listing) |
K4A4G165WF-BCWE fbga-96 (tfbga) 腳位配置指南
K4A4G165WF-BCWE（fbga-96 (tfbga) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4A4G165WF-BCWE.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4A4G165WF-BCWE 適用於 6 應用s: Industrial Embedded ARM Computing, Networking and Communications Equipment, Test and Measurement Instrumentation, Industrial HMI and Display Systems, Embedded x86 and Gateway Servers, Automotive-Adjacent and Robotics Controllers.
Industrial Embedded ARM Computing
The K4A4G165WF-BCWE fits industrial ARM-based edge computing and HMI controller boards that need 4GB-class DDR4 main memory. Its 256M x 16 organization provides a 16-bit data bus that halves component count versus x8 designs, and the DDR4-3200 speed grade supplies 2.5 GB/s peak per device, adequate for Linux-class SoCs running vision or protocol workloads. In use, the DRAM connects to the SoC memory controller in fly-by address/command topology with dynamic ODT handling termination on-die, simplifying routing. The 1.2V rail consumes roughly 25% less power than DDR3 per Samsung, reducing thermal load in fanless enclosures; verify the SoC QVL lists DDR4-3200 x16 components before release.
推薦
Networking and Communications Equipment
In switch, router, and gateway line cards, the K4A4G165WF-BCWE serves as packet buffer and control-plane memory. The DDR4-3200 data rate (3200 Mbps per pin) and bank-group architecture sustain the random-access patterns of packet buffering, while CRC and data-mask functions improve data path reliability without external logic. The x16 interface with on-die termination (dynamic ODT) supports multi-rank fly-by routing on dense boards. The 0C to +85C commercial-industrial range covers indoor telecom closets and controlled data-center environments. Designers should budget the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling close to the FBGA-96 power balls, and confirm the network processor supports DDR4 x16 device organization.
推薦
Test and Measurement Instrumentation
Bench instruments such as oscilloscopes, logic analyzers, and signal generators use the K4A4G165WF-BCWE as deep waveform capture memory. Its 4Gbit density in a single FBGA-96 device allows large acquisition buffers with a compact footprint, and the 19 ns access time specification reflects fast random read behavior suited to segmentation replay. Because acquisition engines stream data continuously, the DDR4-3200 class bandwidth absorbs sustained write bursts from front-end ADCs. In the circuit, memory controllers perform ZQ calibration at power-up as supported by the device, and data-mask capability simplifies partial writes during waveform processing. The 0C to +85C rating suits laboratory environments rather than extended outdoor temperature ranges.
推薦
Industrial HMI and Display Systems
Human-machine interface panels with large frame buffers benefit from the K4A4G165WF-BCWE's 4Gbit capacity and x16 organization, which deliver 512 MB of framebuffer and application memory per device. Display controllers moving 1080p or multi-layer graphics need sustained bandwidth; the DDR4-3200 rating supplies headroom over DDR3-class predecessors while the 1.2V operation cuts enclosure heat by roughly 25% versus DDR3 per Samsung's DDR4 family data. The auto precharge and asynchronous reset functions speed up display-list reconfiguration and simplify power-fail recovery in factory settings. Mount the FBGA-96 on a 4-layer or better PCB with length-matched DQ groups; the 0C to +85C range covers typical indoor factory floors.
推薦
Embedded x86 and Gateway Servers
Compact embedded x86 gateways and micro-servers use the K4A4G165WF-BCWE as main system memory in single-device or multi-rank configurations. Its DDR4-3200 throughput supports virtualized workloads, and the CRC feature adds a link-integrity layer valued in always-on server-class designs. The 96-ball FBGA footprint permits placing DRAM directly on the carrier board or on soldered-down memory modules where SODIMM sockets are impractical. During integration, enable dynamic ODT and ZQ calibration as the device supports, and follow fly-by routing for address/command across multiple devices. The commercial 0C to +85C range targets climate-controlled server rooms; extended-temperature deployments should consider industrial DRAM grades instead.
推薦
Automotive-Adjacent and Robotics Controllers
Non-safety robotics controllers and factory automation computers adopt the K4A4G165WF-BCWE for vision processing and motion-planning workloads. The 4Gbit F-die device provides the memory capacity needed by camera pipelines and path planners, while 2.5 GB/s peak bandwidth per x16 device keeps frame buffers and control loops responsive. In the memory subsystem, the controller applies ZQ calibration after reset as the device supports, and the CRC/data-mask functions protect and streamline data writes. Controllers should verify operation within 0C to +85C; harsher automotive-bay environments require the qualified industrial/automotive variants such as the K4A4G165WE-BIRC0CV family. Decouple the 1.2V rail with bulk capacitance near the FBGA-96 power balls for burst tolerance.
推薦
推薦產品摘要
工程參考資料，適用於 K4A4G165WF-BCWE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4A4G165WE-BCWE | K4A4G165WF-BCTD | K4A4G165WE-BCTD | K4A4G165WE-BIRC0CV |
|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density / Organization | 4 Gbit / 256M x 16 | 4 Gbit / 256M x 16 | 4 Gbit / 256M x 16 | 4 Gbit / 256M x 16 | 4 Gbit / 256M x 16 |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | F-die | E-die | F-die | E-die | E-die |
| Grade | Standard commercial/industrial | Standard | Standard | Standard | Industrial/automotive grade (IR suffix) |
主要差異化特點
- Highest speed grade in the Samsung 4Gb x16 DDR4 line (對比K4A4G165WF-BCTD)
- Newer F-die silicon generation (對比K4A4G165WE-BCWE)
- Lower unit price than older F-die speed variant (對比K4A4G165WF-BCTD)
設計說明
Route DDR4-3200 signal groups per Samsung's DDR4 design guide: fly-by topology for address/command with per-device series termination, and per-byte-group length matching for DQ/DQS within the controller skew budget (typically tens of mils at this data rate - use your controller's specification). Place the 240-ohm ZQ calibration resistor with a short, clean ground return. The FBGA-96 balls allow via-in-pad escape on 4-layer boards; on 2-layer hobby layouts DDR4-3200 timing will likely fail, so plan at least 4 layers with solid reference planes.
The device operates from a nominal 1.2V rail (1.14V to 1.26V). Use a dedicated point-of-load buck regulator (for example TI TPS54218 family) with fast transient response, plus 100 nF ceramic decoupling per power ball region and 22 uF to 47 uF bulk near the device. Follow the datasheet power-rail sequencing table (VDD before or with reference rails as specified) to avoid latch-up during startup. Estimated: at full DDR4-3200 activity, budget several hundred mA per device; confirm idle/active currents from the datasheet IDD tables for your power tree.
Confirm the memory controller qualified (QVL) lists DDR4-3200 x16 F-die components - many industrial SoCs cap at DDR4-2666, in which case the K4A4G165WF-BCTD or K4A4G165WE-BCTD is the correct choice. Also note the BCWE grade is rated 0C to +85C: the BCTD variant extends to +95C if your enclosure runs hot. Finally, DDR4 uses bank groups - blindly reusing DDR3 controller timing will cause initialization failures; run the controller's training and ZQ calibration routines at every boot.
合規資訊
RoHS compliance stated on JLCPCB listing for C5827965. REACH, halogen-free, and conflict-minerals declarations not found in provided data - request from Samsung via distributor.
