K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN： K4B4G1646D-BYMA0 ✓ 啟用中K4B4G1646D-BYMA0 概覽
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is backward-compatible with DDR3 slots, making it a popular choice for upgrading existing systems while saving energy.
Key features include a 256M x 16 organization, 1.35V power supply, 1866 Mbps data rate, and a 96-ball FBGA package. It supports auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (ODT). The operating temperature range is 0°C to +85°C, suitable for commercial and industrial environments.
The device uses a 4Gb D-die, which is the fourth generation of Samsung's DDR3L die, offering improved performance and power efficiency. The 96-ball FBGA package provides excellent thermal and electrical characteristics, enabling high-speed signal integrity in dense PCB layouts.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems that require high memory density and low power. The 1.35V operation makes it ideal for power-sensitive designs, such as battery-powered devices and energy-efficient data centers.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper on-die termination calibration.
直接替換替代品，適用於 K4B4G1646D-BYMA0 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646D-BYMA0 （相同外形與佔位） — 差異在於 Data Rate, Package, Supply Voltage, Operating Temperature, Auto Precharge.
K4B4G1646E-BYMA
✅ 直接替換✗ 缺貨
$14.3182 / 單位
查看資料表 →K4B4G1646D-BYK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BCMA
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K512M16HA-125
✅ 直接替換📋 參考替代品（不在目錄中）
H5TQ4G63CFR-PBC
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C256M16D3LC-10BCN
✅ 直接替換📋 參考替代品（不在目錄中）
K4B4G1646D-BYMA0 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 組織 | 256M x 16 |
| Total Memory Size | 4 Gb |
| 供應電壓 | 1.35 V |
| 資料速率 | 1866 Mbps (PC3-14900) |
| 封裝 | 96-ball FBGA |
| 工作溫度範圍 | 0°C to +85°C |
| Lead-Free | Yes |
| 無鹵素 | Yes |
| RoHS Compliant | Yes |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| ZQ Calibration | Supported |
| Data Mask | Supported |
| Dynamic On-Chip Termination | Supported |
K4B4G1646D-BYMA0 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data input/output 2 |
| 腳位 B2 | DQ3 — Data input/output 3 |
| 腳位 B3 | VDDQ — I/O power supply |
| 腳位 B4 | DQ4 — Data input/output 4 |
| 腳位 C1 | DQ5 — Data input/output 5 |
| 腳位 C2 | DQ6 — Data input/output 6 |
| 腳位 C3 | DQ7 — Data input/output 7 |
| 腳位 C4 | VSS — Ground |
典型應用
K4B4G1646D-BYMA0 適用於 6 應用s: Server Memory, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics, Automotive Infotainment.
Server Memory
The K4B4G1646D-BYMA0 provides high-density, low-power memory for servers, enabling efficient data processing and reduced energy costs. Its 1866 Mbps data rate and 1.35V operation make it ideal for cloud computing and data centers where power efficiency is critical. The 4Gb capacity supports large workloads, and the FBGA package ensures reliable performance in dense server boards.
推薦
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BYMA0 offers fast data buffering and low latency. Its high data rate and 1.35V operation reduce power consumption, which is crucial for always-on network devices. The auto precharge and ODT features improve signal integrity, ensuring reliable data transmission in high-speed network interfaces.
推薦
Industrial PCs
Industrial PCs require robust memory that can operate in harsh environments. The K4B4G1646D-BYMA0's 0°C to +85°C temperature range and lead-free, halogen-free construction make it suitable for industrial applications. Its 4Gb capacity and 1866 Mbps speed support demanding industrial control and automation tasks, while the FBGA package provides durability.
推薦
Embedded Systems
For embedded systems, the K4B4G1646D-BYMA0 offers a balance of performance and power efficiency. Its 1.35V operation extends battery life in portable devices, and the 4Gb capacity supports complex applications like real-time data processing. The small FBGA package is ideal for space-constrained designs, and the ZQ calibration feature ensures accurate on-die termination.
推薦
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the K4B4G1646D-BYMA0 provides high-speed memory for smooth multimedia playback. Its 1866 Mbps data rate handles 4K video streams, while 1.35V operation reduces heat and power consumption. The RoHS compliance makes it suitable for consumer products sold globally.
推薦
Automotive Infotainment
The K4B4G1646D-BYMA0 is used in automotive infotainment systems for navigation, audio, and video processing. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 4Gb capacity supports complex user interfaces. The FBGA package withstands vibration and temperature variations, making it reliable for automotive environments.
推薦
推薦產品摘要
工程參考資料，適用於 K4B4G1646D-BYMA0 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes |
主要差異化特點
- Low voltage operation (1.35V) (對比Standard DDR3 (1.5V))
- High data rate (1866 Mbps) (對比K4B4G1646D-BYK0 (1600 Mbps))
- Enhanced temperature range (對比K4B4G1646D-BYK0 (0°C to +85°C))
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper calibration. Follow the layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps.
The K4B4G1646D-BYMA0 operates up to +85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, monitor the junction temperature to avoid exceeding the maximum rating.
At 1866 Mbps, signal integrity is critical. Use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) and minimize trace length mismatches. Implement proper termination and use the dynamic ODT feature to reduce reflections. Simulate the memory bus to verify timing margins.
合規資訊
RoHS compliant and lead-free per datasheet. Halogen-free. No AEC-Q100 qualification for this memory component.
