K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
MPN： K4B4G1646D-BFMA ✓ 啟用中K4B4G1646D-BFMA 概覽
DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate of its predecessor DDR2. It is widely used in PCs, servers, and embedded systems due to its high bandwidth and low power consumption. The K4B4G1646D-BFMA is part of Samsung's D-die family, offering improved performance and reliability.
Key features include a 16-bit I/O width, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It features on-die termination (ODT), programmable CAS latency, and a temperature-compensated self-refresh (TCSR) mode. The device is packaged in a 96-ball FBGA (Fine-Pitch Ball Grid Array) with a 0.8mm ball pitch, enabling compact PCB designs.
The K4B4G1646D-BFMA uses a 4Gb D-die architecture with a 1.5V core and I/O supply, achieving a typical operating current of and standby current of . It supports a wide operating temperature range of 0°C to 95°C (case temperature), making it suitable for industrial and consumer environments.
Typical applications include DDR3 memory modules for desktop and laptop computers, networking equipment, set-top boxes, and automotive infotainment systems. Its high density and speed make it ideal for systems requiring large memory capacity with moderate power consumption.
When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling capacitors near the VDD and VDDQ pins. The device requires a 1.5V supply and a separate VREFCA and VREFDQ reference voltage, which should be generated with low-noise sources.
直接替換替代品，適用於 K4B4G1646D-BFMA — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646D-BFMA （相同外形與佔位） — 差異在於 CAS Latency, Data Rate, Supply Voltage, Package, Operating Temperature.
K4B4G1646E-BYK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BCK00
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BHMA
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646Q
✅ 直接替換聯絡詢價
查看資料表 →AS4C256M16D3C-12BCN
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →K4B4G1646D-BFMA 最大額定值與電氣特性
| 記憶體類型 | DDR3 SDRAM |
| Density | 4Gb |
| 組織 | 256M x 16 |
| 資料速率 | 1866 Mbps |
| 供應電壓 | 1.5V |
| 封裝 | 96-ball FBGA |
| Ball Pitch | 0.8mm |
| Number of Banks | 8 |
| Burst Length | 8 and 4 (with burst chop) |
| CAS 延遲 | Programmable |
| On-Die Termination | Yes |
| Temperature Range | 0°C to 95°C (case) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
K4B4G1646D-BFMA 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | VSS — Ground |
| 腳位 A3 | DQ0 — Data input/output 0 |
| 腳位 A4 | DQ1 — Data input/output 1 |
| 腳位 A5 | VDDQ — I/O power supply |
| 腳位 A6 | VSSQ — I/O ground |
| 腳位 A7 | DQ2 — Data input/output 2 |
| 腳位 A8 | DQ3 — Data input/output 3 |
| 腳位 A9 | VDD — Power supply |
| 腳位 A10 | VSS — Ground |
| 腳位 B1 | CK — Clock |
| 腳位 B2 | CK# — Complementary clock |
| 腳位 B3 | CKE — Clock enable |
| 腳位 B4 | CS# — Chip select |
| 腳位 B5 | RAS# — Row address strobe |
| 腳位 B6 | CAS# — Column address strobe |
| 腳位 B7 | WE# — Write enable |
| 腳位 B8 | ODT — On-die termination |
| 腳位 B9 | A0 — Address input 0 |
| 腳位 B10 | A1 — Address input 1 |
典型應用
K4B4G1646D-BFMA 適用於 6 應用s: Desktop and Laptop Memory Modules, Networking Equipment, Set-Top Boxes and Consumer Electronics, Automotive Infotainment Systems, Industrial Control Systems, Medical Devices.
Desktop and Laptop Memory Modules
The K4B4G1646D-BFMA is ideal for DDR3 memory modules in desktop and laptop computers. Its 4Gb density and 1866 Mbps data rate provide high bandwidth for multitasking and gaming. The 1.5V supply is standard for DDR3, ensuring compatibility with existing memory controllers. The 96-FBGA package allows compact module designs, and the 0-95°C temperature range covers typical consumer operating conditions. When used in SO-DIMM or UDIMM modules, it delivers reliable performance for everyday computing tasks.
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Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BFMA provides high-speed packet buffering and routing table storage. Its 1866 Mbps data rate ensures low-latency data transfer, critical for network performance. The 4Gb density allows for large routing tables and buffering of multiple data streams. The 1.5V supply is efficient for always-on networking devices. The 96-FBGA package is suitable for space-constrained line cards, and the 0-95°C range accommodates typical networking environments.
推薦
Set-Top Boxes and Consumer Electronics
The K4B4G1646D-BFMA is well-suited for set-top boxes and consumer electronics, providing memory for video decoding, user interfaces, and application processing. Its 4Gb density supports high-definition video streams and multiple applications. The 1866 Mbps data rate ensures smooth playback and responsive UI. The 1.5V supply is compatible with consumer power rails. The 96-FBGA package enables compact designs for slim devices. The 0-95°C temperature range covers typical home entertainment environments.
推薦
Automotive Infotainment Systems
In automotive infotainment systems, the K4B4G1646D-BFMA provides memory for navigation, media playback, and vehicle diagnostics. Its 4Gb density supports complex graphical interfaces and large map databases. The 1866 Mbps data rate ensures fast loading of applications. The 1.5V supply is suitable for automotive power systems. The 96-FBGA package is robust for vibration-prone environments. The 0-95°C temperature range covers automotive cabin conditions, though for extended temperature ranges, consider industrial-grade variants.
推薦
Industrial Control Systems
The K4B4G1646D-BFMA is used in industrial control systems for data logging, real-time processing, and HMI applications. Its 4Gb density allows for extensive data buffering and logging. The 1866 Mbps data rate supports real-time control loops. The 1.5V supply is common in industrial power designs. The 96-FBGA package is suitable for rugged PCBs. The 0-95°C temperature range covers most industrial environments, but for harsh conditions, verify the temperature grade of the specific variant.
推薦
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BFMA provides reliable memory for data acquisition and display. Its 4Gb density supports high-resolution imaging and continuous monitoring data. The 1866 Mbps data rate ensures real-time data processing. The 1.5V supply is suitable for medical power systems. The 96-FBGA package is compact for portable devices. The 0-95°C temperature range covers clinical environments. For medical certification, ensure the device meets required standards.
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推薦產品摘要
工程參考資料，適用於 K4B4G1646D-BFMA — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4B4G1646E-BYK0 | K4B4G1646D-BCK0 | AS4C256M16D3C-12BCN | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Alliance Memory | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.5V | 1.5V | 1.5V | 1.5V | 1.5V |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- High data rate of 1866 Mbps (對比K4B4G1646D-BCK0)
- D-die architecture with proven reliability (對比K4B4G1646E-BYK0)
- Wide temperature range of 0-95°C (對比K4B4G1646D-BHMA)
設計說明
Ensure controlled impedance traces for DQ, DQS, and clock signals to maintain signal integrity. Use 50-ohm single-ended and 100-ohm differential routing. Keep trace lengths matched within 100 mils for data and address buses. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BFMA operates up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA]. For high-density modules, consider thermal simulation to verify junction temperature stays within limits.
Do not exceed the maximum supply voltage of 1.575V. Ensure VREFCA and VREFDQ are generated with low-noise sources, as noise on these references can degrade signal integrity. Follow the layout guidelines in the datasheet for termination and routing to avoid reflections and crosstalk.
合規資訊
RoHS compliant and lead-free/halogen-free per Samsung datasheet. AEC-Q100 not applicable for standard DDR3 SDRAM.
