K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN： K4B4G1646D-BCH90 ✓ 啟用中K4B4G1646D-BCH90 概覽
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
直接替換替代品，適用於 K4B4G1646D-BCH90 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646D-BCH90 （相同外形與佔位） — 差異在於 Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
K4B4G1646D-BHMA
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BYK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BCMA
✅ 直接替換📋 參考替代品（不在目錄中）
K4B4G1646D-BFMA
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646E-BMMA
✅ 直接替換✗ 缺貨
$16.0781 / 單位
查看資料表 →MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →H5TC4G63AFR
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K4B4G1646D-BCH90 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4Gb |
| 組織 | 32M x 16 |
| Number of Banks | 8 |
| 資料速率 | 2133 Mb/s per pin |
| 供應電壓 | 1.35V (1.283V to 1.45V) |
| 封裝 | 96-ball FBGA |
| 工作溫度 | 0°C to +85°C |
| CAS 延遲 | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| 無鹵素 | Yes |
K4B4G1646D-BCH90 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VDD — Power supply |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VSS — Ground |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VDD — Power supply |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | VSSQ — I/O ground |
| 腳位 C3 | VDDQ — I/O power supply |
| 腳位 C4 | VSSQ — I/O ground |
| 腳位 C5 | VDDQ — I/O power supply |
| 腳位 C6 | VSSQ — I/O ground |
| 腳位 C7 | VDDQ — I/O power supply |
| 腳位 C8 | VSSQ — I/O ground |
| 腳位 C9 | VDDQ — I/O power supply |
| 腳位 C10 | VSSQ — I/O ground |
| 腳位 C11 | VDDQ — I/O power supply |
| 腳位 C12 | VSSQ — I/O ground |
| 腳位 D1 | A0 — Address input 0 |
| 腳位 D2 | A1 — Address input 1 |
| 腳位 D3 | A2 — Address input 2 |
| 腳位 D4 | A3 — Address input 3 |
| 腳位 D5 | A4 — Address input 4 |
| 腳位 D6 | A5 — Address input 5 |
| 腳位 D7 | A6 — Address input 6 |
| 腳位 D8 | A7 — Address input 7 |
| 腳位 D9 | A8 — Address input 8 |
| 腳位 D10 | A9 — Address input 9 |
| 腳位 D11 | A10/AP — Address input 10 / auto precharge |
| 腳位 D12 | A11 — Address input 11 |
| 腳位 E1 | A12 — Address input 12 |
| 腳位 E2 | A13 — Address input 13 |
| 腳位 E3 | A14 — Address input 14 |
| 腳位 E4 | BA0 — Bank address 0 |
| 腳位 E5 | BA1 — Bank address 1 |
| 腳位 E6 | BA2 — Bank address 2 |
| 腳位 E7 | RAS# — Row address strobe |
| 腳位 E8 | CAS# — Column address strobe |
| 腳位 E9 | WE# — Write enable |
| 腳位 E10 | CS# — Chip select |
| 腳位 E11 | CKE — Clock enable |
| 腳位 E12 | ODT — On-die termination |
| 腳位 F1 | CK — Clock |
| 腳位 F2 | CK# — Complementary clock |
| 腳位 F3 | VDD — Power supply |
| 腳位 F4 | VSS — Ground |
| 腳位 F5 | VDD — Power supply |
| 腳位 F6 | VSS — Ground |
| 腳位 F7 | VDD — Power supply |
| 腳位 F8 | VSS — Ground |
| 腳位 F9 | VDD — Power supply |
| 腳位 F10 | VSS — Ground |
| 腳位 F11 | VDD — Power supply |
| 腳位 F12 | VSS — Ground |
| 腳位 G1 | DM0 — Data mask 0 |
| 腳位 G2 | DM1 — Data mask 1 |
| 腳位 G3 | VSS — Ground |
| 腳位 G4 | VDD — Power supply |
| 腳位 G5 | VSS — Ground |
| 腳位 G6 | VDD — Power supply |
| 腳位 G7 | VSS — Ground |
| 腳位 G8 | VDD — Power supply |
| 腳位 G9 | VSS — Ground |
| 腳位 G10 | VDD — Power supply |
| 腳位 G11 | VSS — Ground |
| 腳位 G12 | VDD — Power supply |
| 腳位 H1 | ZQ — Calibration reference |
| 腳位 H2 | VSS — Ground |
| 腳位 H3 | VDD — Power supply |
| 腳位 H4 | VSS — Ground |
| 腳位 H5 | VDD — Power supply |
| 腳位 H6 | VSS — Ground |
| 腳位 H7 | VDD — Power supply |
| 腳位 H8 | VSS — Ground |
| 腳位 H9 | VDD — Power supply |
| 腳位 H10 | VSS — Ground |
| 腳位 H11 | VDD — Power supply |
| 腳位 H12 | VSS — Ground |
| 腳位 J1 | NC — No connect |
| 腳位 J2 | NC — No connect |
| 腳位 J3 | NC — No connect |
| 腳位 J4 | NC — No connect |
| 腳位 J5 | NC — No connect |
| 腳位 J6 | NC — No connect |
| 腳位 J7 | NC — No connect |
| 腳位 J8 | NC — No connect |
| 腳位 J9 | NC — No connect |
| 腳位 J10 | NC — No connect |
| 腳位 J11 | NC — No connect |
| 腳位 J12 | NC — No connect |
典型應用
K4B4G1646D-BCH90 適用於 6 應用s: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
推薦
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
推薦
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
推薦
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
推薦
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
推薦
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
推薦
推薦產品摘要
工程參考資料，適用於 K4B4G1646D-BCH90 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Low voltage operation at 1.35V (對比MT41K256M16HA-125)
- High data rate of 2133Mb/s (對比MT41K256M16HA-125)
- D-die process technology (對比K4B4G1646E-BMMA)
設計說明
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
合規資訊
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
