AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
MPN： AS4C512M16D4B-62BCNTR ✓ 啟用中AS4C512M16D4B-62BCNTR 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage, and increased density. DDR4 is a key component in modern computing systems, including servers, desktops, laptops, and embedded systems, where it serves as the main system memory or as a buffer for high-speed data processing.
Key features of the AS4C512M16D4B-62BCNTR include a fast clock rate of 1600 MHz, a CAS latency of 19 ns, and a parallel interface. It is JEDEC standard compliant, ensuring compatibility with industry-standard DDR4 memory controllers. The device supports on-die termination (ODT) and posted CAS, which improve signal integrity and reduce bus turnaround time. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
The architecture of the AS4C512M16D4B-62BCNTR utilizes an 8n prefetch design, which allows the internal DRAM core to operate at a lower frequency while the I/O interface transfers data at high speed. This architecture reduces power consumption and improves thermal performance. The device also includes auto-refresh and self-refresh modes to maintain data integrity with minimal power draw.
Typical applications for this DDR4 SDRAM include servers, networking equipment, industrial computing, and high-performance embedded systems. Its high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers, cloud computing, and advanced driver-assistance systems (ADAS).
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable 1.2V supply and careful PCB layout to maintain signal integrity at high speeds. Refer to the datasheet for detailed timing and layout guidelines.
直接替換替代品，適用於 AS4C512M16D4B-62BCNTR — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： AS4C512M16D4B-62BCNTR （相同外形與佔位） — 差異在於 Data Rate, Package, Operating Temperature, Interface, CAS Latency.
AS4C512M16D4B-62BCN
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C512M16D4A-62BCN
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16TB-062E:R
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$60 / 單位
查看資料表 →H5AN8G6NAFR-UHC
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$5.7422 / 單位
查看資料表 →K4A8G165WB-BCTD
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$37 / 單位
查看資料表 →AS4C512M16D4B-62BCNTR 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) |
| 資料速率 | 3200 MT/s |
| Clock Frequency | 1600 MHz |
| CAS 延遲 | 19 ns |
| 供應電壓 | 1.2 V (1.14V to 1.26V) |
| 介面 | Parallel |
| 封裝 | 96-FBGA (7.5x13 mm) |
| 工作溫度 | 0°C to 95°C |
| 安裝類型 | Surface Mount |
| JEDEC Standard | Compliant |
| 組織 | 512M x 16 |
| Revision | Rev.B |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
AS4C512M16D4B-62BCNTR 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
典型應用
AS4C512M16D4B-62BCNTR 適用於 6 應用s: Server Memory, Networking Equipment, Industrial Computing, Automotive Infotainment, Consumer Electronics, Data Acquisition Systems.
Server Memory
The AS4C512M16D4B-62BCNTR provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and database workloads. Its 3200 MT/s data rate ensures fast data throughput, while the 1.2V operation reduces power consumption in data centers. The 96-ball FBGA package allows high-density board layouts, and the JEDEC compliance ensures compatibility with standard server memory controllers.
推薦
Networking Equipment
In networking equipment such as routers and switches, the AS4C512M16D4B-62BCNTR offers high-bandwidth memory for packet buffering and forwarding tables. The 1600 MHz clock speed supports line-rate processing, and the low latency (19 ns) minimizes delays. The commercial temperature range (0-95°C) is suitable for most networking environments, and the compact FBGA package fits in space-constrained line cards.
推薦
Industrial Computing
For industrial PCs and embedded systems, the AS4C512M16D4B-62BCNTR provides reliable, high-speed memory for real-time control and data acquisition. Its 8Gb density supports complex applications, and the 1.2V supply reduces heat generation in sealed enclosures. The device's JEDEC compliance ensures long-term availability and compatibility with industrial-grade processors.
推薦
Automotive Infotainment
The AS4C512M16D4B-62BCNTR can be used in automotive infotainment systems for navigation, multimedia, and instrument clusters. Its high data rate supports smooth graphics rendering, and the 8Gb capacity accommodates large maps and media files. However, the commercial temperature range (0-95°C) limits use to cabin environments, not under-hood applications. For automotive-grade, consider AEC-Q100 qualified parts.
推薦
Consumer Electronics
In high-end consumer electronics like gaming consoles and set-top boxes, the AS4C512M16D4B-62BCNTR delivers the memory bandwidth needed for immersive experiences. The 3200 MT/s data rate supports 4K video streaming and complex game physics. The low power consumption extends battery life in portable devices, and the compact package enables slim designs.
推薦
Data Acquisition Systems
For high-speed data acquisition systems, the AS4C512M16D4B-62BCNTR provides large buffer memory to store sampled data before processing. Its fast write speed ensures no data loss during continuous sampling, and the 8Gb capacity allows extended recording times. The parallel interface simplifies integration with FPGAs and DSPs, and the low voltage reduces noise in sensitive analog front-ends.
推薦
推薦產品摘要
工程參考資料，適用於 AS4C512M16D4B-62BCNTR — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | AS4C512M16D4B-62BCN | MT40A512M16TB-062E:R | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Micron Technology | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0 to 95°C | 0 to 95°C | 0 to 95°C | 0 to 95°C |
| CAS Latency | 19 ns | 19 ns | 19 ns | 19 ns |
| JEDEC Compliance | Yes | Yes | Yes | Yes |
主要差異化特點
- Drop-in replacement for major brands (對比MT40A512M16TB-062E:R)
- Tape-and-reel packaging for automated assembly (對比AS4C512M16D4B-62BCN)
- Commercial temperature range for cost savings (對比H5AN8G6NAFR-UHC)
設計說明
The AS4C512M16D4B-62BCNTR requires a stable 1.2V supply (VDD) and 1.2V I/O supply (VDDQ). Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. The total decoupling capacitance should be at least 2uF per device.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to reduce EMI and signal crosstalk.
The AS4C512M16D4B-62BCNTR has a maximum operating temperature of 95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to avoid exceeding the limit.
合規資訊
RoHS compliant per distributor listings. No AEC-Q100 qualification for this commercial-temperature part.
