AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
MPN： AS4C512M16D4A-62BCN ✓ 啟用中AS4C512M16D4A-62BCN 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) for improved power efficiency and features higher density and faster speeds. DDR4 is a key component in modern computing systems, servers, and embedded devices, providing the main memory for processors and other digital systems.
Key features include a fast clock rate of 1600MHz, 18ns CAS latency, and a 96-ball FBGA package with a 7.5x13mm footprint. The device supports commercial temperature range (0°C to 95°C) and is available in tray packaging. It is fully JEDEC compliant, ensuring compatibility with standard DDR4 memory controllers.
Technically, the AS4C512M16D4A-62BCN uses a 16n prefetch architecture, enabling high-speed data transfer. It includes on-die termination (ODT) and programmable read/write latencies for signal integrity. The device also supports auto-refresh and self-refresh modes for power saving. The 1.2V supply reduces power consumption by 20% compared to DDR3L, making it suitable for power-sensitive applications.
Typical applications include servers, networking equipment, industrial PCs, and high-end embedded systems. Its high density and speed make it ideal for data-intensive tasks such as real-time analytics, network processing, and industrial automation. The 512M x 16 organization is particularly suited for systems requiring wide data buses.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1600MHz. The device requires a 1.2V supply and a separate VPP voltage of 2.5V for wordline boost.
直接替換替代品，適用於 AS4C512M16D4A-62BCN — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： AS4C512M16D4A-62BCN （相同外形與佔位） — 差異在於 Package, Data Rate, Operating Temperature, CAS Latency, Clock Frequency.
AS4C512M16D4B-62BCNTR
✅ 直接替換聯絡詢價
查看資料表 →AS4C512M16D4A-62BIN
✅ 直接替換聯絡詢價
查看資料表 →AS4C512M16D4D-62BCN
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16JY-07EAIT:B
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4A8G165WB-BCTD
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5AN8G6NDJR-XNC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →AS4C512M16D4A-62BCN 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit |
| 組織 | 512M x 16 |
| 供應電壓 | 1.2 V |
| 資料速率 | 1600 MHz (3200 Mbps) |
| CAS 延遲 | 18 ns |
| 封裝 | 96-FBGA (7.5x13 mm) |
| 工作溫度 | 0°C to 95°C |
| 安裝類型 | Surface Mount |
| JEDEC Standard | Compliant |
| 介面 | POD (Pseudo Open Drain) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes |
| RoHS 狀態 | Compliant |
| Packaging | Tray |
AS4C512M16D4A-62BCN 腳位配置
| 腳位 A1 | VDD — Power supply (1.2V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply (1.2V) |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 B1 | VPP — Wordline boost supply (2.5V) |
| 腳位 B2 | DQ8 — Data input/output 8 |
| 腳位 B3 | DQ9 — Data input/output 9 |
| 腳位 B4 | VSS — Ground |
| 腳位 B5 | DQ10 — Data input/output 10 |
| 腳位 B6 | DQ11 — Data input/output 11 |
| 腳位 B7 | VDD — Power supply (1.2V) |
| 腳位 B8 | DQ12 — Data input/output 12 |
| 腳位 B9 | DQ13 — Data input/output 13 |
| 腳位 B10 | VSS — Ground |
| 腳位 B11 | DQ14 — Data input/output 14 |
| 腳位 B12 | DQ15 — Data input/output 15 |
典型應用
AS4C512M16D4A-62BCN 適用於 6 應用s: Server Memory, Networking Equipment, Industrial Computing, High-Performance Embedded Systems, Data Acquisition Systems, Telecommunications Infrastructure.
Server Memory
The AS4C512M16D4A-62BCN provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and database workloads. Its 1600MHz data rate and 1.2V operation deliver high bandwidth with lower power consumption compared to DDR3, making it ideal for energy-efficient data centers. The 512M x 16 organization supports wide data buses, improving memory throughput in multi-channel configurations. When used in servers, it is typically paired with a DDR4 memory controller and ECC support for reliability. The commercial temperature range (0°C to 95°C) suits standard server environments, and the 96-ball FBGA package allows high-density DIMM designs.
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Networking Equipment
In networking equipment such as routers, switches, and firewalls, the AS4C512M16D4A-62BCN provides fast, high-capacity memory for packet buffering, routing tables, and flow processing. Its 1600MHz data rate ensures low-latency access to critical data, while the 8Gb density supports large forwarding databases. The 1.2V supply reduces power dissipation in dense line cards, and the JEDEC compliance ensures compatibility with standard network processors. The 96-ball FBGA package is ideal for compact PCB layouts in high-port-count systems. For optimal performance, place the memory close to the network processor and use proper termination to maintain signal integrity at high speeds.
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Industrial Computing
The AS4C512M16D4A-62BCN is well-suited for industrial PCs, HMI systems, and embedded controllers that require reliable, high-speed memory. Its 8Gb capacity supports complex applications like real-time data acquisition and machine vision. The 1.2V operation minimizes heat generation, which is critical in sealed industrial enclosures. The commercial temperature range (0°C to 95°C) is adequate for most factory environments, but for harsher conditions, the industrial grade AS4C512M16D4A-62BIN is recommended. The 96-ball FBGA package provides robust solder joints for vibration resistance. When designing, ensure adequate power decoupling and follow the layout guidelines to maintain signal integrity in noisy industrial settings.
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High-Performance Embedded Systems
For high-performance embedded systems like FPGA-based accelerators, DSP boards, and advanced driver-assistance systems (ADAS), the AS4C512M16D4A-62BCN offers the density and speed needed for data-intensive processing. Its 1600MHz data rate enables fast data transfer between the processor and memory, while the 8Gb capacity supports large datasets. The 1.2V supply is compatible with modern low-power SoCs. The 512M x 16 organization is ideal for 16-bit or 32-bit memory interfaces. The JEDEC compliance ensures seamless integration with standard memory controllers. In such systems, the memory is often used in conjunction with high-speed interfaces like PCIe or Ethernet, requiring careful PCB design to minimize crosstalk and signal skew.
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Data Acquisition Systems
In data acquisition systems, the AS4C512M16D4A-62BCN provides high-speed, high-capacity memory for buffering large volumes of sensor data. Its 1600MHz data rate allows rapid sampling and storage, while the 8Gb density can hold extended recordings. The 1.2V operation reduces power consumption in portable or remote data loggers. The commercial temperature range is suitable for laboratory and field environments. The 96-ball FBGA package is compact, enabling small form-factor designs. When used with high-resolution ADCs, the memory must be able to sustain continuous write operations; the DDR4 architecture with burst mode is well-suited for this. Proper termination and impedance matching are essential to maintain signal integrity at high data rates.
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Telecommunications Infrastructure
The AS4C512M16D4A-62BCN is used in telecommunications infrastructure such as base stations, switches, and routers, where high bandwidth and reliability are paramount. Its 1600MHz data rate supports high-throughput packet processing, and the 8Gb density accommodates large routing tables and call records. The 1.2V supply reduces power consumption in remote radio heads and central offices. The JEDEC compliance ensures interoperability with standard telecom processors. The commercial temperature range is adequate for controlled environments, but for outdoor installations, consider the industrial grade variant. The 96-ball FBGA package is suitable for compact line cards. To ensure reliable operation, follow the manufacturer's layout guidelines and use proper decoupling.
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推薦產品摘要
工程參考資料，適用於 AS4C512M16D4A-62BCN — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | AS4C512M16D4B-62BCN | AS4C512M16D4A-62BIN | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C | -40°C to 95°C | 0°C to 95°C |
主要差異化特點
- Drop-in replacement for AS4C512M16D4B-62BCN (對比AS4C512M16D4B-62BCN)
- Industrial temperature variant available (對比AS4C512M16D4A-62BIN)
- Cross-brand compatibility with major memory vendors (對比MT40A512M16JY-07EAIT:B)
設計說明
The AS4C512M16D4A-62BCN requires a 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD and VPP pin to minimize voltage ripple. The VPP supply should be able to handle transient currents during refresh operations. Refer to the Alliance Memory datasheet for recommended decoupling capacitor values and placement.
For reliable operation at 1600MHz, follow the PCB layout guidelines in the Alliance Memory datasheet. Ensure controlled impedance for DQ, DQS, and address/command lines (typically 40-50 ohms). Keep trace lengths matched within +/- 10 mils for data and strobe signals. Use a solid ground plane and avoid splitting the plane under the memory device. Place the memory close to the controller to minimize trace lengths and reduce signal degradation.
The AS4C512M16D4A-62BCN has a maximum power dissipation of approximately 1.5W under typical operating conditions. The 96-ball FBGA package has a thermal resistance (theta_JA) of about 20°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. In high-density designs, consider the cumulative heat from multiple memory devices and provide sufficient ventilation.
合規資訊
RoHS compliant per distributor listings. Not AEC-Q100 qualified. REACH and conflict minerals status not specified in available data.
