NT5CC256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN： NT5CC256M16CP-DII ✓ 啟用中NT5CC256M16CP-DII 概覽
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in computing and embedded systems.
Key features include a 256Mx16 organization, 800MHz clock frequency (1600Mbps data rate), 1.35V nominal voltage, and industrial temperature grade. The device supports 8192 refresh cycles and features on-die termination (ODT) for improved signal integrity. The TFBGA-96 package with 0.8mm pitch enables compact PCB designs, and the halogen-free, RoHS-compliant construction meets modern environmental standards.
The NT5CC256M16CP-DII utilizes Nanya's 70nm DDR3 A-die process technology, offering a balance of performance and power efficiency. The 1.35V DDR3L parts are backward compatible with 1.5V DDR3 systems, providing design flexibility. The industrial temperature grade ensures reliable operation from -40°C to +95°C, making it suitable for harsh environments.
Typical applications include networking equipment (routers, switches), industrial automation controllers, embedded computing modules, and automotive infotainment systems. The high density and low power consumption make it ideal for memory-intensive applications where space and thermal budgets are constrained.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at DDR3-1600 speeds. The ODT feature should be configured via mode registers to match the system's memory topology.
直接替換替代品，適用於 NT5CC256M16CP-DII — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16CP-DII （相同外形與佔位） — 差異在於 Package, Supply Voltage, Data Rate, Burst Length, CAS Latency (CL).
NT5CC256M16DP-DI
✅ 直接替換聯絡詢價
查看資料表 →NT5CC256M16ER-DII
✅ 直接替換📋 參考替代品（不在目錄中）
NT5CC256M16CP-DI
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16TW-107
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.1 / 單位
查看資料表 →K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →IS43TR16512B-125KBLI
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NT5CC256M16CP-DII 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 組織 | 256M x 16 |
| Total Density | 4Gb |
| Clock Frequency | 800 MHz |
| 資料速率 | 1600 Mbps |
| 供應電壓 | 1.35 V |
| Temperature Grade | Industrial |
| 封裝 | TFBGA-96 (9x13 mm, 0.8 mm pitch) |
| Number of Terminals | 96 |
| Refresh Cycles | 8192 |
| Access Time | 0.225 ns |
| Technology | CMOS |
| RoHS | Compliant |
| 無鹵素 | Yes |
| 工作溫度範圍 | -40°C to +95°C |
NT5CC256M16CP-DII 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDD — Power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
典型應用
NT5CC256M16CP-DII 適用於 6 應用s: Networking Equipment, Industrial Automation, Embedded Computing, Automotive Infotainment, Data Center Storage, Medical Devices.
Networking Equipment
The NT5CC256M16CP-DII provides high-density, low-power memory for routers and switches. Its 4Gb density and 1600Mbps data rate support high-throughput packet processing, while the 1.35V operation reduces power consumption in always-on network devices. The industrial temperature grade ensures reliable operation in uncontrolled environments like telecom cabinets.
推薦
Industrial Automation
In industrial controllers and PLCs, the NT5CC256M16CP-DII offers reliable memory with industrial temperature rating. The 256Mx16 organization provides ample storage for control algorithms and data logging. Its low voltage and high density enable compact, energy-efficient designs for factory floor equipment that must operate 24/7 in harsh conditions.
推薦
Embedded Computing
For embedded computing modules, the NT5CC256M16CP-DII delivers high memory bandwidth in a small TFBGA-96 package. The 1600Mbps data rate supports demanding applications like real-time data processing and edge computing. The 1.35V supply reduces thermal load, making it suitable for fanless designs in space-constrained systems.
推薦
Automotive Infotainment
The NT5CC256M16CP-DII is suitable for automotive infotainment systems that require high-density memory for navigation, multimedia, and connectivity. Its industrial temperature grade covers automotive cabin environments, and the low power consumption helps meet vehicle energy budgets. The 4Gb density supports complex user interfaces and multiple applications simultaneously.
推薦
Data Center Storage
In data center storage controllers, the NT5CC256M16CP-DII provides high-density, low-power memory for caching and buffering. The 1600Mbps data rate enables fast data transfers, while the 1.35V operation reduces power consumption in large-scale deployments. The industrial temperature grade ensures reliability in server rooms with variable cooling.
推薦
Medical Devices
The NT5CC256M16CP-DII is used in medical imaging and monitoring equipment that require reliable, high-density memory. Its industrial temperature grade supports operation in clinical environments, and the low power consumption is beneficial for portable devices. The 4Gb density allows storage of large image datasets and patient records.
推薦
推薦產品摘要
工程參考資料，適用於 NT5CC256M16CP-DII — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16DP-DI | NT5CC256M16ER-DII | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | FBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Industrial temperature grade (對比NT5CC256M16CP-DI)
- Low voltage operation (對比MT41K256M16TW-107)
- Halogen-free and RoHS compliant (對比K4B4G1646E-BYMA)
設計說明
For DDR3L-1600 operation, maintain controlled impedance for data and address lines (typically 40-60 ohms single-ended). Keep trace lengths matched within 50 mils for data byte lanes and within 100 mils for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The industrial temperature grade allows operation up to 95°C case temperature. Ensure adequate airflow or heatsinking in high-ambient environments. The 1.35V supply reduces power dissipation compared to 1.5V DDR3, but at 1600Mbps data rates, the device can still generate significant heat. Monitor junction temperature in dense layouts.
Use on-die termination (ODT) to improve signal integrity on the data bus. Configure RTT_Nom via mode register MR1 to match the system's memory topology. For point-to-point connections, a 40-ohm ODT is typical. For multi-rank systems, adjust ODT and drive strength settings to minimize reflections and crosstalk.
合規資訊
RoHS compliant and halogen-free per datasheets.com and EEWORLD listings. AEC-Q100 not applicable for DRAM.
