1EDN7136UXTSA1 vs 1EDN7136GXTMA1 对比
详细并排对比 1EDN7136UXTSA1 出自 Infineon 和 1EDN7136GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7136UXTSA1 | 1EDN7136GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $1.02 |
| 功能 | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| 输出数量 | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | 4 A |
| Peak Sink Current | 2 A | 8 A |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| 工作温度范围 | -40 C to +150 C | — |
| 封装 | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (leadless, thermal pad) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes (per Infineon product family convention) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| UVLO | — | Yes (VDD under-voltage lockout) |
| Propagation Delay | — | Sub-nanosecond class |
| 工作温度 | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |