1EDN7136UXTSA1 vs 1EDN7136GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 1EDN7136GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 1EDN7136UXTSA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Function | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Number of Outputs | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | 4 A |
| Peak Sink Current | 2 A | 8 A |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Operating Temperature Range | -40 C to +150 C | — |
| Package | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes (per Infineon product family convention) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| UVLO | — | Yes (VDD under-voltage lockout) |
| Propagation Delay | — | Sub-nanosecond class |
| Operating Temperature | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |