2ED2106S06FXUMA1 vs 2ED2108S06FXUMA1 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 2ED2108S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中
Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 2ED2108S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.30
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns [DATA_NEEDED: propagation delay ns]
输出数量 2 (1 high-side, 1 low-side) 2 (high-side + low-side)
Number of Drivers 2 1
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) PG-DSO-8-53 (DSO-8)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Undervoltage Lockout (UVLO) — Yes (VCC and VB)
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]
工作温度 — -40 C to +125 C
MSL 等级 — 1
RoHS 状态 — Compliant

数据手册与资源

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