2ED2106S06FXUMA1 vs 2ED2108S06FXUMA1 Comparison
Detailed side-by-side comparison of 2ED2106S06FXUMA1 by Infineon and 2ED2108S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2ED2106S06FXUMA1 | 2ED2108S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Offset Voltage (Voffset max) | 650 V | — |
| Configuration | High-Side and Low-Side (Half-Bridge) | — |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Input Logic Compatibility | CMOS, TTL | — |
| Propagation Delay (typ.) | 100 ns | [DATA_NEEDED: propagation delay ns] |
| Number of Outputs | 2 (1 high-side, 1 low-side) | 2 (high-side + low-side) |
| Number of Drivers | 2 | 1 |
| Number of Pins | 8 | — |
| Package | PG-DSO-8-69 (DSO-8) | PG-DSO-8-53 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Bootstrap Diode | Integrated | — |
| Operating Temperature Range | -40C to +125C | — |
| Packaging | Tape & Reel | — |
| Output Type | Half-Bridge, Non-Inverting | — |
| Driver Configuration | — | Half-Bridge |
| Gate Type | — | N-Channel MOSFET, IGBT |
| Logic Input | — | Non-Inverting |
| Input Voltage (VCC) | — | 10 V to 20 V |
| High-Side Bootstrap Voltage Rating | — | 650 V |
| Peak Source Current (typ.) | — | 0.29 A |
| Peak Sink Current (typ.) | — | 0.7 A |
| Integrated Bootstrap Diode | — | Yes |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB) |
| Rise / Fall Time (typ.) | — | [DATA_NEEDED: tr/tf ns] |
| Operating Temperature | — | -40 C to +125 C |
| MSL Level | — | 1 |
| RoHS Status | — | Compliant |