2ED2106S06FXUMA1 vs IRS21834STRPBF 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 IRS21834STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中
Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 IRS21834STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.45
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Half-Bridge
Source Current (typ.) 0.29 A 1.9 A
Sink Current (typ.) 0.7 A 2.3 A
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 200 ns
输出数量 2 (1 high-side, 1 low-side) —
Number of Drivers 2 2 (high-side + low-side)
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) 14-SOIC (SOIC-14)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C -40C to +125C
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Negative Transient Voltage Tolerance — dV/dt immune
MSL 等级 — 1 (unlimited)
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

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