2ED21834S06JXUMA1 vs 1EDI20N12AFXUMA1 对比

详细并排对比 2ED21834S06JXUMA1 出自 Infineon 和 1EDI20N12AFXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 量产中

规格对比

参数 2ED21834S06JXUMA1 1EDI20N12AFXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $1.45
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封装 PG-DSO-14-49 (DSO-14) PG-DSO-8-51 (DSO-8, 8-pin, narrow body)
引脚数 14 —
安装类型 Surface Mount Surface Mount
工作温度范围 -40 °C to +125 °C -40 °C to +125 °C
RoHS 状态 Compliant —
Standard Reel Quantity 3000 —
Driver Configuration — Single high-side, isolated
Isolation Type — Galvanic (coreless transformer), reinforced
Number of Channels — 1
Maximum Supply Voltage (Output Side) — 17 V
Minimum Supply Voltage (Output Side) — 3.1 V
Peak Source Current — 4.0 A (typical)
Peak Sink Current — 3.5 A (typical)
Working Voltage (Isolation) — 1200 V (high-side rail reference)
Propagation Delay — 120 ns (typical)
输出配置 — Separate source and sink pins
Short-Circuit Clamping — Yes (built-in)
MSL 等级 — 2 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价