2ED21834S06JXUMA1 vs 1EDI20N12AFXUMA1 Comparison

Detailed side-by-side comparison of 2ED21834S06JXUMA1 by Infineon and 1EDI20N12AFXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED21834S06JXUMA1

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 βœ“ Active

Specification Comparison

Parameter 2ED21834S06JXUMA1 1EDI20N12AFXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $1.45
Product Type Half-Bridge Gate Driver IC β€”
Configuration Half-bridge (high-side + low-side) β€”
Maximum Offset Voltage (VBS) 650 V β€”
Typical Sink Current 2.5 A β€”
Typical Source Current 2.5 A β€”
Input Logic Non-Inverting β€”
Integrated Bootstrap Diode Yes β€”
Technology SOI (Silicon-On-Insulator) high-voltage β€”
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) β€”
Package PG-DSO-14-49 (DSO-14) PG-DSO-8-51 (DSO-8, 8-pin, narrow body)
Number of Pins 14 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 Β°C to +125 Β°C -40 Β°C to +125 Β°C
RoHS Status Compliant β€”
Standard Reel Quantity 3000 β€”
Driver Configuration β€” Single high-side, isolated
Isolation Type β€” Galvanic (coreless transformer), reinforced
Number of Channels β€” 1
Maximum Supply Voltage (Output Side) β€” 17 V
Minimum Supply Voltage (Output Side) β€” 3.1 V
Peak Source Current β€” 4.0 A (typical)
Peak Sink Current β€” 3.5 A (typical)
Working Voltage (Isolation) β€” 1200 V (high-side rail reference)
Propagation Delay β€” 120 ns (typical)
Output Configuration β€” Separate source and sink pins
Short-Circuit Clamping β€” Yes (built-in)
MSL Level β€” 2 (per JEDEC J-STD-020)
RoHS Compliance β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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