AS4C512M16D4A-62BCNTR vs K4A8G165WC-BCWE 对比
详细并排对比 AS4C512M16D4A-62BCNTR 出自 Alliance Memory 和 K4A8G165WC-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR ✓ 量产中
规格对比
| 参数 | AS4C512M16D4A-62BCNTR | K4A8G165WC-BCWE |
|---|---|---|
| 品牌 | Alliance Memory | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.10 | $38.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit (512M x 16) | — |
| 电源电压 | 1.14V ~ 1.26V (nominal 1.2V) | — |
| Clock Rate | 1600 MHz (DDR4-3200) | — |
| CAS 延迟 | 18 ns | [DATA_NEEDED: CAS Latency] |
| 封装 | 96-FBGA (7.5x13 mm) | 96-FBGA |
| 工作温度 | 0°C to +95°C (Commercial) | — |
| 接口 | POD (Pseudo Open Drain) | Differential (CK, /CK) |
| 数据速率 | 3200 MT/s | 3200 Mbps |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS | Compliant | — |
| Moisture Sensitivity Level | 3 (168 Hours) | — |
| Write Cycle Time - Word, Page | 15 ns | — |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| 工作温度范围 | — | 0°C to +95°C |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| RoHS 状态 | — | Compliant |
| JEDEC Standard | — | JEDEC DDR4 |