AS4C512M16D4A-62BCNTR vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of AS4C512M16D4A-62BCNTR by Alliance Memory and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4A-62BCNTR
AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCNTR β ActiveSamsung Electronics
K4A8G165WC-BCWE
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE β ActiveSpecification Comparison
| Parameter | AS4C512M16D4A-62BCNTR | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | β |
| Supply Voltage | 1.14V ~ 1.26V (nominal 1.2V) | β |
| Clock Rate | 1600 MHz (DDR4-3200) | β |
| CAS Latency | 18 ns | [DATA_NEEDED: CAS Latency] |
| Package | 96-FBGA (7.5x13 mm) | 96-FBGA |
| Operating Temperature | 0Β°C to +95Β°C (Commercial) | β |
| Interface | POD (Pseudo Open Drain) | Differential (CK, /CK) |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Refresh | Auto-refresh and self-refresh | β |
| RoHS | Compliant | β |
| Moisture Sensitivity Level | 3 (168 Hours) | β |
| Write Cycle Time - Word, Page | 15 ns | β |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Voltage | β | 2.5 V |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Burst Length | β | 8 (BL8) / 4 (BC4) |
| Number of Banks | β | 16 |
| Row Address Bits | β | 16 |
| Column Address Bits | β | 10 |
| RoHS Status | β | Compliant |
| JEDEC Standard | β | JEDEC DDR4 |