AS4C512M16D4A-62BIN vs K4A8G165WB-BIWE 对比
详细并排对比 AS4C512M16D4A-62BIN 出自 Alliance Memory 和 K4A8G165WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ 量产中规格对比
| 参数 | AS4C512M16D4A-62BIN | K4A8G165WB-BIWE |
|---|---|---|
| 品牌 | Alliance Memory | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.10 | $14.22 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Rate | 1600 MHz | — |
| 数据速率 | 3200 Mbps per pin | 3200 Mbps |
| 电源电压 | 1.14V ~ 1.26V (nominal 1.2V) | 1.2 V |
| 工作温度 | -40°C to +95°C | -40°C to +95°C |
| 封装 | 96-FBGA (7.5x13mm) | 96-ball FBGA |
| 接口 | POD (Pseudo Open Drain) | Parallel |
| CAS 延迟 | Programmable (e.g., 22 cycles) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (with burst chop 4) | 8, 16 |
| Refresh | Auto-refresh and self-refresh | Auto-refresh, Self-refresh |
| RoHS | Compliant | Compliant |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Density | — | 8 Gb |
| On-Die Termination | — | Yes |
| 引脚数 | — | 96 |