AS4C512M16D4A-62BIN vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of AS4C512M16D4A-62BIN by Alliance Memory and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ ActiveSpecification Comparison
| Parameter | AS4C512M16D4A-62BIN | K4A8G165WB-BIWE |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| Clock Rate | 1600 MHz | — |
| Data Rate | 3200 Mbps per pin | 3200 Mbps |
| Supply Voltage | 1.14V ~ 1.26V (nominal 1.2V) | 1.2 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C |
| Package | 96-FBGA (7.5x13mm) | 96-ball FBGA |
| Interface | POD (Pseudo Open Drain) | Parallel |
| CAS Latency | Programmable (e.g., 22 cycles) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (with burst chop 4) | 8, 16 |
| Refresh | Auto-refresh and self-refresh | Auto-refresh, Self-refresh |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | Surface Mount |
| Lead Free | Yes | — |
| Density | — | 8 Gb |
| On-Die Termination | — | Yes |
| Number of Pins | — | 96 |