BGA7L1N6E6327XTSA1 vs BGA7L1N6E6327XT 对比
详细并排对比 BGA7L1N6E6327XTSA1 出自 Infineon 和 BGA7L1N6E6327XT 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BGA7L1N6E6327XTSA1 | BGA7L1N6E6327XT |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | RF Amplifiers | RF Amplifiers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $0.36 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BGA7L1N6E6327XTSA1 | — |
| 功能 | RF Low Noise Amplifier (LNA) MMIC | — |
| Technology | Silicon Germanium (SiGe) | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB (typical) | 13.3 dB |
| Noise Figure | 0.90 dB (typical) | — |
| 电源电压 | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| 电源电流 | 4.4 mA (typical) | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic-high enable | Digital on/off switch, 1 V logic level |
| Input/Output Impedance | Internally matched to 50 ohm | — |
| 封装 | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm | TSNP-6-2 (leadless) |
| 工作温度 | -40 C to +85 C | — |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Pack Quantity | 15,000 (reel) | — |
| RoHS 状态 | Compliant | Compliant |
| Target Application | LTE low-band (700/800/900 MHz) receiver front-end | — |
| Type | — | Low Noise Amplifier (LNA) MMIC |
| Noise Figure (NF) | — | 0.90 dB |
| Package Footprint | — | 0.7 mm x 1.1 mm |
| 工作温度范围 | — | -40C to +85C |
| 拓扑 | — | Single-stage with on-chip matching and bypass |
| Application Band | — | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) |