BSS138L vs BSS138NH6327XTSA2 对比

详细并排对比 BSS138L 出自 onsemi 和 BSS138NH6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 量产中

规格对比

参数 BSS138L BSS138NH6327XTSA2
品牌 onsemi Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.02 $0.15
Polarity N-Channel N-Channel
Operating Mode Enhancement Mode Enhancement
VDS Drain-Source Voltage 50 V —
Continuous Drain Current (Ta) 200 mA 230 mA
Power Dissipation (Ta) 350 mW 360 mW
RDS(on) Max 3.5 ohm —
Technology Trench MOSFET, high cell density —
Gate Type Logic Level —
封装 SOT-23-3 PG-SOT-23 (3-pin)
安装类型 Surface Mount Surface Mount
Configuration Single FET —
Switching Performance Fast switching, rugged, reliable —
输入电容 [DATA_NEEDED: Ciss] —
VGS Gate-Source Voltage [DATA_NEEDED: VGS max rating] —
工作温度范围 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Tj max and operating range]
Packaging 3000 units per reel (tape and reel) Tape and Reel
RoHS 状态 [DATA_NEEDED: RoHS status] —
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
无卤 — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]

数据手册与资源

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