BSS138L vs BSS138NH6327XTSA2 Comparison

Detailed side-by-side comparison of BSS138L by onsemi and BSS138NH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 βœ“ Active

Specification Comparison

Parameter BSS138L BSS138NH6327XTSA2
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.02 $0.15
Polarity N-Channel N-Channel
Operating Mode Enhancement Mode Enhancement
VDS Drain-Source Voltage 50 V β€”
Continuous Drain Current (Ta) 200 mA 230 mA
Power Dissipation (Ta) 350 mW 360 mW
RDS(on) Max 3.5 ohm β€”
Technology Trench MOSFET, high cell density β€”
Gate Type Logic Level β€”
Package SOT-23-3 PG-SOT-23 (3-pin)
Mounting Type Surface Mount Surface Mount
Configuration Single FET β€”
Switching Performance Fast switching, rugged, reliable β€”
Input Capacitance [DATA_NEEDED: Ciss] β€”
VGS Gate-Source Voltage [DATA_NEEDED: VGS max rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Tj max and operating range]
Packaging 3000 units per reel (tape and reel) Tape and Reel
RoHS Status [DATA_NEEDED: RoHS status] β€”
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 60 V
R_DS(on) max @ V_GS=10V β€” 3.5 ohm
Gate Threshold V_GS(th) β€” [DATA_NEEDED: typical V_GS(th) value]
Gate-Source Voltage V_GS max β€” Β±20 V
dv/dt Rated β€” Yes
Halogen-Free β€” Yes (per IEC 61249-2-21)
RoHS Compliance β€” Compliant
AEC-Q101 Qualification β€” Qualified
Lead Plating β€” Pb-free
Marking Code β€” [DATA_NEEDED: top-side marking code]

Datasheets & Resources

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