FDD8896 vs FDD8880 对比

详细并排对比 FDD8896 出自 onsemi 和 FDD8880 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

onsemi
FDD8880 FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 ⚠ 最后一次采购

规格对比

参数 FDD8896 FDD8880
品牌 onsemi onsemi
分类 MOSFETs MOSFETs
生命周期状态 停产 最后采购期
库存状态 有库存 有库存
单价(USD) $0.62 $0.68
晶体管类型 N-Channel PowerTrench MOSFET —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) at Ta 17 A —
Continuous Drain Current (Id) at Tc 94 A —
Drain-Source On-Resistance (rDS(ON)) 5.7 mOhm —
Power Dissipation (Pd) at Tc 80 W —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] [DATA_NEEDED: gate charge]
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: Vgs Max] —
Technology PowerTrench (trench MOSFET) PowerTrench
安装类型 Surface Mount Surface Mount
封装 TO-252 (DPAK), 3-Pin (2+Tab) TO-252AA (DPAK)
引脚数量 3 —
Configuration Single FET Single FET
Typical Application DC/DC converters, synchronous PWM controllers —
Manufacturer Fairchild Semiconductor (now onsemi) —
Packing Tape & Reel (T/R) —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 13 A (Ta), 58 A (Tc)
On-Resistance (rDS(on)) — 9 mOhm max
Total Power Dissipation (PD) — 55 W (Tc)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max]
Threshold Voltage (VGS th) — [DATA_NEEDED: threshold voltage]
工作温度范围 — [DATA_NEEDED: operating temperature range]
Thermal Resistance (RthJA) — [DATA_NEEDED: thermal resistance]
RoHS 状态 — [DATA_NEEDED: RoHS status]
生命周期状态 — Last Shipments

数据手册与资源

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