FDD8896 vs FDD8880 Comparison

Detailed side-by-side comparison of FDD8896 by onsemi and FDD8880 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

onsemi
FDD8880 FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 ⚠ Last Time Buy

Specification Comparison

Parameter FDD8896 FDD8880
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Eol Last_time_buy
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.68
Transistor Type N-Channel PowerTrench MOSFET β€”
Drain-Source Voltage (Vdss) 30 V β€”
Continuous Drain Current (Id) at Ta 17 A β€”
Continuous Drain Current (Id) at Tc 94 A β€”
Drain-Source On-Resistance (rDS(ON)) 5.7 mOhm β€”
Power Dissipation (Pd) at Tc 80 W β€”
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] [DATA_NEEDED: gate charge]
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: Vgs Max] β€”
Technology PowerTrench (trench MOSFET) PowerTrench
Mounting Type Surface Mount Surface Mount
Package TO-252 (DPAK), 3-Pin (2+Tab) TO-252AA (DPAK)
Pin Count 3 β€”
Configuration Single FET Single FET
Typical Application DC/DC converters, synchronous PWM controllers β€”
Manufacturer Fairchild Semiconductor (now onsemi) β€”
Packing Tape & Reel (T/R) β€”
Polarity β€” N-Channel
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) β€” 13 A (Ta), 58 A (Tc)
On-Resistance (rDS(on)) β€” 9 mOhm max
Total Power Dissipation (PD) β€” 55 W (Tc)
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max]
Threshold Voltage (VGS th) β€” [DATA_NEEDED: threshold voltage]
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Thermal Resistance (RthJA) β€” [DATA_NEEDED: thermal resistance]
RoHS Status β€” [DATA_NEEDED: RoHS status]
Lifecycle Status β€” Last Shipments

Datasheets & Resources

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