H5AN4G6NBJR-UHC vs K4A4G165WD-BCTD 对比
详细并排对比 H5AN4G6NBJR-UHC 出自 SK hynix 和 K4A4G165WD-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-UHC | K4A4G165WD-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.09 | $19.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V |
| Technology | CMOS | — |
| 工作温度 | -40C to +95C | 0C to +85C (commercial) |
| 封装 | FBGA-96 (PBGA-96) | 96-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| 数据速率 | — | 2666 Mbps/pin (-BCTD speed grade) |
| Core Supply (VPP) | — | 2.5 V |
| 接口 | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |