H5AN8G4NAFR-UHC vs H5AN8G6NAFR-UHC 对比

详细并排对比 H5AN8G4NAFR-UHC 出自 SK hynix 和 H5AN8G6NAFR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-UHC H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix

H5AN8G4NAFR-UHC ✓ 量产中
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC ✓ 量产中

规格对比

参数 H5AN8G4NAFR-UHC H5AN8G6NAFR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $5.74
Manufacturer SK hynix (Hynix Semiconductor) —
存储器类型 DDR4 SDRAM (CMOS) DDR4 SDRAM
Density 8 Gbit 8 Gb
存储组织 2G x4 512M x 16
Supply Voltage (VDD) 1.2 V —
Speed Grade UHC —
接口 Synchronous, dual rising/falling clock edges —
Clock Input Differential CK_t / CK_c —
封装 78-ball FBGA FBGA-96
安装类型 Surface Mount —
工作温度 [DATA_NEEDED: operating temperature range] 0°C to +85°C
RoHS 状态 Compliant (Lead-Free & Halogen-Free) —
Family Variants H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Datasheet Revision Rev. 1.2 (Jul. 2017), 45 pages —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Packaging [DATA_NEEDED: reel / tray quantity] —
电源电压 — 1.2 V
数据速率 — 2400 MT/s
Number of Terminals — 96
Package Code — TFBGA
Lead-Free — Yes
无卤 — Yes
RoHS Compliant — Yes
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Burst Length — 8, 4 (with burst chop)
Refresh — Auto self-refresh

数据手册与资源

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