H5ANAG6NCR-VKC vs H5ANAG6NAMR-UHC 对比

详细并排对比 H5ANAG6NCR-VKC 出自 SK hynix 和 H5ANAG6NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG6NCR-VKC H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5ANAG6NCR-VKC ✓ 量产中
SK hynix
H5ANAG6NAMR-UHC H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC ✓ 量产中

规格对比

参数 H5ANAG6NCR-VKC H5ANAG6NAMR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $4.50
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit 16 Gbit (2 GB)
存储组织 2G x 8 1G x 16
接口 DDR4 (Double Data Rate 4) —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
数据速率 [DATA_NEEDED: verified speed grade in Mbps] —
封装 96-ball FBGA FBGA-96 (PBGA96)
安装类型 Surface Mount Surface Mount (BGA solder ball)
Banks 16 banks (4 bank groups x 4) —
Burst Length BL8 —
Refresh Mode 1x / 2x / 4X per JEDEC DDR4 —
工作温度 [DATA_NEEDED: temperature suffix range confirmation] [DATA_NEEDED: operating temperature range]
Technology CMOS —
Application Main memory (PC / server / embedded) —
RoHS 状态 [DATA_NEEDED: RoHS compliance statement] [DATA_NEEDED: RoHS status]
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Refresh — Self-refresh and auto-refresh (DDR4 standard 64 ms)
CAS 延迟 — [DATA_NEEDED: CL for UHC bin]
接口类型 — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
生命周期状态 — Active production

数据手册与资源

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