IAUCN10S7L180ATMA1 vs IAUCN10S5L280DATMA1 对比
详细并排对比 IAUCN10S7L180ATMA1 出自 Infineon 和 IAUCN10S5L280DATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN10S7L180ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Number of Channels | 1 | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tj) | 39 A | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V | — |
| Typical RDS(on) | 18 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) | — |
| Total Gate Charge (Qg) | 11 nC | — |
| Input Capacitance (Ciss) | 272 pF | — |
| Output Capacitance (Coss) | 668 pF | — |
| Reverse Transfer Capacitance (Crss) | 7 pF | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-61 (SSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | Yes (AEC-Q101, IAU prefix) |
| RoHS 状态 | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | Dual N-Channel MOSFET Array |
| Channel Mode | Enhancement | — |
| Part Status | Active | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Technology | — | OptiMOS 5 Trench MOSFET |
| 工作温度范围 | — | -55C to +175C (junction) |
| 引脚数量 | — | 8 |
| MSL 等级 | — | 1 |
| Packing | — | Tape & Reel (T&R) |