IAUCN10S7L180ATMA1 vs IAUCN10S5L280DATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L180ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1 - 100V 39A 18mΞ© Automotive MOSFET | Infineon
IAUCN10S7L180ATMA1 β ActiveInfineon
IAUCN10S5L280DATMA1
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L180ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Number of Channels | 1 | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tj) | 39 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΞ© @ VGS=10 V | β |
| Typical RDS(on) | 18 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V (Β±16 V per JLCPCB listing) | β |
| Total Gate Charge (Qg) | 11 nC | β |
| Input Capacitance (Ciss) | 272 pF | β |
| Output Capacitance (Coss) | 668 pF | β |
| Reverse Transfer Capacitance (Crss) | 7 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | Yes (AEC-Q101, IAU prefix) |
| RoHS Status | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | Dual N-Channel MOSFET Array |
| Channel Mode | Enhancement | β |
| Part Status | Active | β |
| Product Family | β | OptiMOS 5 |
| Drain-Source Voltage (Vds) | β | 100 V |
| Continuous Drain Current (Id) at Tj | β | 23 A |
| Power Dissipation (Pd) at Tc | β | 38 W |
| Technology | β | OptiMOS 5 Trench MOSFET |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Pin Count | β | 8 |
| MSL Level | β | 1 |
| Packing | β | Tape & Reel (T&R) |