IAUCN10S7L180ATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7L180ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN10S7L180ATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
Transistor Type N-Channel MOSFET —
Number of Channels 1 —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tj) 39 A —
Power Dissipation (PD, Tc=25°C) 58 W —
Drain-Source On-Resistance (RDS(on)) 16.1 mΩ @ VGS=10 V —
Typical RDS(on) 18 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.6 V —
Maximum Gate-Source Voltage (VGS) ±20 V (±16 V per JLCPCB listing) —
Total Gate Charge (Qg) 11 nC —
Input Capacitance (Ciss) 272 pF —
Output Capacitance (Coss) 668 pF —
Reverse Transfer Capacitance (Crss) 7 pF —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes Yes (AEC-Q101, IAU prefix)
RoHS Status EU RoHS Compliant with Exemption Compliant
Configuration Single Quad Drain Triple Source Dual N-Channel MOSFET Array
Channel Mode Enhancement —
Part Status Active —
Product Family — OptiMOS 5
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Technology — OptiMOS 5 Trench MOSFET
Operating Temperature Range — -55C to +175C (junction)
Pin Count — 8
MSL Level — 1
Packing — Tape & Reel (T&R)

Datasheets & Resources

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