IPD320N20N3GATMA1 vs IPD200N15N3GATMA1 对比
详细并排对比 IPD320N20N3GATMA1 出自 Infineon 和 IPD200N15N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD320N20N3GATMA1 | IPD200N15N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.34 | $1.50 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 | OptiMOS 3 (trench) |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID, Tc) | 34 A | — |
| Power Dissipation (PD, Tc) | 136 W | — |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| 工作温度范围 | -55 C to +175 C (Tj) | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified for target application | — |
| Channel Mode | Enhancement mode | — |
| Gate Threshold Level | Normal level (per datasheet title) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD200N15N3GATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, TC=25C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 20 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, TC=25C) | — | 150 W |
| 工作结温 | — | -55 C to +175 C |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| MSL 等级 | — | 1 |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |