IPG16N10S461AATMA1 vs IPG16N10S4L61AATMA1 对比
详细并排对比 IPG16N10S461AATMA1 出自 Infineon 和 IPG16N10S4L61AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ 量产中规格对比
| 参数 | IPG16N10S461AATMA1 | IPG16N10S4L61AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.12 |
| Manufacturer | Infineon Technologies | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | Logic-Level, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-10 (Wettable Flank) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | — |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| FET Type | — | Dual N-Channel (Array) |
| Continuous Drain Current (ID) at 25C | — | 16 A |
| Power Dissipation (PD) | — | 29 W |
| 封装 / 外壳 | — | PG-TDSON-8-10 (Wettable Flank) |
| 工作温度 | — | -55C to +175C (TJ) |
| 湿敏等级（MSL） | — | MSL1 (unlimited floor life at <30C / 85% RH) |
| Peak Reflow Temperature | — | 260 C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| RoHS Compliance | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (Wettable Flank) |
| FET Feature | — | Logic Level Gate |