IPG16N10S461AATMA1 vs IPG16N10S4L61AATMA1 Comparison

Detailed side-by-side comparison of IPG16N10S461AATMA1 by Infineon and IPG16N10S4L61AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG16N10S461AATMA1 IPG16N10S4L61AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench Logic-Level, Enhancement Mode
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Operating Temperature Range -55 °C to +175 °C —
Package PG-TDSON-8-10 (Wettable Flank) —
Mounting Type Surface Mount Surface Mount
Terminal Count 8 —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant —
Built-in Body Diode Yes —
Channel Mode Enhancement —
FET Type — Dual N-Channel (Array)
Continuous Drain Current (ID) at 25C — 16 A
Power Dissipation (PD) — 29 W
Package / Case — PG-TDSON-8-10 (Wettable Flank)
Operating Temperature — -55C to +175C (TJ)
Moisture Sensitivity Level (MSL) — MSL1 (unlimited floor life at <30C / 85% RH)
Peak Reflow Temperature — 260 C
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS Compliance — Compliant (Green Product)
Avalanche Tested — 100% (per datasheet)
AOI Compatible — Yes (Wettable Flank)
FET Feature — Logic Level Gate

Datasheets & Resources

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