IPL65R230C7AUMA1 vs IPD65R225C7ATMA1 对比

详细并排对比 IPL65R230C7AUMA1 出自 Infineon 和 IPD65R225C7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 ✓ 量产中
Infineon
IPD65R225C7ATMA1 IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 ✓ 量产中

规格对比

参数 IPL65R230C7AUMA1 IPD65R225C7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $1.34
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS C7) Super-junction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID) at Tc 10 A —
Power Dissipation (PD) at Tc 67 W —
Drain-Source On-Resistance (RDS(on)) max 230 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] —
工作结温 -55 C to +150 C —
封装 PG-VSON-4 (surface mount, 4 pins) PG-TO252-3 (DPAK)
安装类型 Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) —
RoHS 状态 Compliant Compliant
无卤 Yes (per Infineon product page) —
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
工作温度范围 — -55°C to +150°C
引脚数 — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

数据手册与资源

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