IPL65R230C7AUMA1 vs IPD65R225C7ATMA1 Comparison

Detailed side-by-side comparison of IPL65R230C7AUMA1 by Infineon and IPD65R225C7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R230C7AUMA1 IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 - 650V CoolMOS C7 MOSFET 230mOhm | Infineon

IPL65R230C7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL65R230C7AUMA1 IPD65R225C7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $1.34
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS C7) Super-junction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 650 V β€”
Continuous Drain Current (ID) at Tc 10 A β€”
Power Dissipation (PD) at Tc 67 W β€”
Drain-Source On-Resistance (RDS(on)) max 230 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) [DATA_NEEDED: Qg typical at VGS=10V] β€”
Operating Junction Temperature -55 C to +150 C β€”
Package PG-VSON-4 (surface mount, 4 pins) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
ESD Protection Yes (integrated, per datasheet) β€”
RoHS Status Compliant Compliant
Halogen-Free Yes (per Infineon product page) β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDSS) β€” 650 V
Continuous Drain Current (ID) at TC β€” 11 A
Power Dissipation (PD) at TC β€” 63 W
On-Resistance RDS(on) max β€” 225 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V (max)
Operating Temperature Range β€” -55Β°C to +150Β°C
Number of Pins β€” 3 (2 + tab)
Avalanche Energy Rated β€” Yes (per datasheet)

Datasheets & Resources

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