IPN95R3K7P7ATMA1 vs IPN95R1K2P7ATMA1 对比

详细并排对比 IPN95R3K7P7ATMA1 出自 Infineon 和 IPN95R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 量产中

规格对比

参数 IPN95R3K7P7ATMA1 IPN95R1K2P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.44 $0.36
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS P7
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V —
Continuous Drain Current (ID) at Tc 2.0 A —
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) CoolMOS P7 (Super Junction)
封装 PG-SOT223 (3-pin + tab, surface mount) SOT-223-3 (PG-SOT223)
安装类型 Surface Mount Surface Mount
工作结温 -55 C to +150 C —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL rating] —
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
引脚数量 — 3 (2 + Tab)
工作温度范围 — -55C to +150C
Packaging — Tape & Reel
Part Status — Active

数据手册与资源

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