IPN95R3K7P7ATMA1 vs IPN95R1K2P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN95R3K7P7ATMA1 von Infineon und IPN95R1K2P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN95R3K7P7ATMA1 | IPN95R1K2P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,44 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | CoolMOS P7 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | — |
| Continuous Drain Current (ID) at Tc | 2.0 A | — |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | CoolMOS P7 (Super Junction) |
| Gehäuse | PG-SOT223 (3-pin + tab, surface mount) | SOT-223-3 (PG-SOT223) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Betriebstemperaturbereich | — | -55C to +150C |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |