IRF150P220AKMA1 vs IRFP250MPBF 对比
详细并排对比 IRF150P220AKMA1 出自 Infineon 和 IRFP250MPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF150P220AKMA1 | IRFP250MPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.55 | $2.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | IRFP250MPBF |
| Technology | StrongIRFET | HEXFET (IR MOSFET) |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | 214 W |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | TO-247-3 (PG-TO247-3) | — |
| 安装类型 | Through Hole | Through Hole |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| 工作结温 | — | -55C to +175C |
| 封装 / 外壳 | — | TO-247AC (3-pin + tab) |
| 引脚数 | — | 3 |
| Avalanche Rated | — | Yes |
| MSL 等级 | — | 1 (unlimited) |