IRF640NPBF vs IPP600N25N3GXKSA1 对比
详细并排对比 IRF640NPBF 出自 Infineon 和 IPP600N25N3GXKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF640NPBF | IPP600N25N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $1.62 |
| Drain-to-Source Voltage (VDS) | 200 V | 250 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | 136 W |
| Total Gate Charge (Qg) | 44.7 nC | [DATA_NEEDED: Qg typical value] |
| 工作结温 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | MOSFET (Metal Oxide) |
| 晶体管类型 | N-Channel Enhancement Mode | — |
| 封装 | TO-220AB (through-hole, 3-pin) | — |
| 安装类型 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 25 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 60 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 封装 / 外壳 | — | TO-220-3 (PG-TO220-3-1) |
| 工作温度范围 | — | -55C to +175C (junction) |
| Reverse Recovery Time (trr) | — | [DATA_NEEDED: trr typical value] |
| Lead Free Status | — | Lead Free / RoHS Compliant |
| 引脚数量 | — | 3 (Gate, Drain, Source) |